Memory effect and new polarized state in the incommensurate phase of TlGaSe2 ferroelectric – semiconductor

The structural, electrical, and thermal properties of the ferroelectric-semiconductor TlGaSe2 have been investigated after the thermal annealing of crystals inside the incommensurate (INC) phase for a few hours at the annealing temperature (Tann). It is found that all outlined physical parameters of...

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Veröffentlicht in:	Journal of applied physics 2011-07, Vol.110 (1)
Hauptverfasser:	Seyidov, MirHasan Yu, Suleymanov, Rauf A., Yakar, Emin, Şahin, Yasin, Açikgöz, Muhammed
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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