Transversal electric field effect in multilayer graphene nanoribbon

We study the effect of transversal electric-field (E-field) on the electronic properties of multilayer armchair-graphene-nanoribbon (AGNR). The bandgap in multilayer-AGNRs can be reversibly modulated with the application of E-field. At optimized widths, we obtain a semiconductor (SC) to metallic (M) and a M-SC transitions. The AGNR electronic bands undergo vivid transformations due to the E-field, leading to phenomena such as an increase in electron velocity, a change in the sign of the electron effective mass, and the formation of linear dispersion with massless Dirac fermions similar to 2D-graphene. These effects are very useful and can be utilized for device applications.