Epitaxial growth and characterization of graphene on free-standing polycrystalline 3C-SiC

The epitaxial growth of graphene on inexpensive, commercially available, free-standing polycrystalline 3 C-SiC has been achieved by solid state graphitization in ultrahigh vacuum. The structural and electronic properties of such epitaxial graphene (EG) have been explored by Raman spectroscopy, scann...

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Veröffentlicht in:	Journal of applied physics 2011-07, Vol.110 (1), p.014308-014308-5
Hauptverfasser:	Huang, Han, Liang Wong, Swee, Tin, Chin-Che, Qiang Luo, Zhi, Xiang Shen, Ze, Chen, Wei, Shen Wee, Andrew Thye
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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