Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN
We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p -ZnO , (InGaN/GaN) multiquantum well (MQW), and n -GaN . An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at...
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| Veröffentlicht in: | Applied physics letters 2011-06, Vol.98 (25), p.251111-251111-3 |
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| Sprache: | eng |
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| container_end_page | 251111-3 |
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| container_issue | 25 |
| container_start_page | 251111 |
| container_title | Applied physics letters |
| container_volume | 98 |
| creator | Park, Tae-Young Choi, Yong-Seok Kim, Sang-Mook Jung, Gun-Young Park, Seong-Ju Kwon, Bong-Joon Cho, Yong-Hoon |
| description | We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped
p
-ZnO
, (InGaN/GaN) multiquantum well (MQW), and
n
-GaN
. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at
750
°
C
, showing that Sb-doped
p
-ZnO
can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped
p
-ZnO
layer. |
| doi_str_mv | 10.1063/1.3601915 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3601915</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-4485fa028abae925f7fbc7f3825b61025192bf857ff8fe821f18638735231b893</originalsourceid><addsrcrecordid>eNp1kLFOwzAQhi0EEqUw8AYe6eDGZ8eJMzCgqpRKFV1gYYkc1y5GjlNiR4i3J6gdYTid7u7TSf-H0C3QOdCCZzDnBYUKxBmaAC1LwgHkOZpQSjkpKgGX6CrGj3EUjPMJ2i-90anv_NC6YKI2QRtsWhej6wK2fddi7_bviYy7lFzY453rdgZ3Fh8weQtbnN2tw0o9Z2PNcDv45D4HFdLQ4i_jfYYDJuPpGl1Y5aO5OfUpen1cviyeyGa7Wi8eNkRzmSeS51JYRZlUjTIVE7a0jS4tl0w0BVAmoGKNlaK0VlojGViQBZclH9NAIys-RbPjX913MfbG1ofetar_roHWv4ZqqE-GRvb-yEbtkkpj4P_hPzTxH8zzbC8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Park, Tae-Young ; Choi, Yong-Seok ; Kim, Sang-Mook ; Jung, Gun-Young ; Park, Seong-Ju ; Kwon, Bong-Joon ; Cho, Yong-Hoon</creator><creatorcontrib>Park, Tae-Young ; Choi, Yong-Seok ; Kim, Sang-Mook ; Jung, Gun-Young ; Park, Seong-Ju ; Kwon, Bong-Joon ; Cho, Yong-Hoon</creatorcontrib><description>We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped
p
-ZnO
, (InGaN/GaN) multiquantum well (MQW), and
n
-GaN
. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at
750
°
C
, showing that Sb-doped
p
-ZnO
can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped
p
-ZnO
layer.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3601915</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-06, Vol.98 (25), p.251111-251111-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-4485fa028abae925f7fbc7f3825b61025192bf857ff8fe821f18638735231b893</citedby><cites>FETCH-LOGICAL-c384t-4485fa028abae925f7fbc7f3825b61025192bf857ff8fe821f18638735231b893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3601915$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Park, Tae-Young</creatorcontrib><creatorcontrib>Choi, Yong-Seok</creatorcontrib><creatorcontrib>Kim, Sang-Mook</creatorcontrib><creatorcontrib>Jung, Gun-Young</creatorcontrib><creatorcontrib>Park, Seong-Ju</creatorcontrib><creatorcontrib>Kwon, Bong-Joon</creatorcontrib><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><title>Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN</title><title>Applied physics letters</title><description>We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped
p
-ZnO
, (InGaN/GaN) multiquantum well (MQW), and
n
-GaN
. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at
750
°
C
, showing that Sb-doped
p
-ZnO
can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped
p
-ZnO
layer.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAQhi0EEqUw8AYe6eDGZ8eJMzCgqpRKFV1gYYkc1y5GjlNiR4i3J6gdYTid7u7TSf-H0C3QOdCCZzDnBYUKxBmaAC1LwgHkOZpQSjkpKgGX6CrGj3EUjPMJ2i-90anv_NC6YKI2QRtsWhej6wK2fddi7_bviYy7lFzY453rdgZ3Fh8weQtbnN2tw0o9Z2PNcDv45D4HFdLQ4i_jfYYDJuPpGl1Y5aO5OfUpen1cviyeyGa7Wi8eNkRzmSeS51JYRZlUjTIVE7a0jS4tl0w0BVAmoGKNlaK0VlojGViQBZclH9NAIys-RbPjX913MfbG1ofetar_roHWv4ZqqE-GRvb-yEbtkkpj4P_hPzTxH8zzbC8</recordid><startdate>20110620</startdate><enddate>20110620</enddate><creator>Park, Tae-Young</creator><creator>Choi, Yong-Seok</creator><creator>Kim, Sang-Mook</creator><creator>Jung, Gun-Young</creator><creator>Park, Seong-Ju</creator><creator>Kwon, Bong-Joon</creator><creator>Cho, Yong-Hoon</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110620</creationdate><title>Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN</title><author>Park, Tae-Young ; Choi, Yong-Seok ; Kim, Sang-Mook ; Jung, Gun-Young ; Park, Seong-Ju ; Kwon, Bong-Joon ; Cho, Yong-Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-4485fa028abae925f7fbc7f3825b61025192bf857ff8fe821f18638735231b893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Tae-Young</creatorcontrib><creatorcontrib>Choi, Yong-Seok</creatorcontrib><creatorcontrib>Kim, Sang-Mook</creatorcontrib><creatorcontrib>Jung, Gun-Young</creatorcontrib><creatorcontrib>Park, Seong-Ju</creatorcontrib><creatorcontrib>Kwon, Bong-Joon</creatorcontrib><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Tae-Young</au><au>Choi, Yong-Seok</au><au>Kim, Sang-Mook</au><au>Jung, Gun-Young</au><au>Park, Seong-Ju</au><au>Kwon, Bong-Joon</au><au>Cho, Yong-Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN</atitle><jtitle>Applied physics letters</jtitle><date>2011-06-20</date><risdate>2011</risdate><volume>98</volume><issue>25</issue><spage>251111</spage><epage>251111-3</epage><pages>251111-251111-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped
p
-ZnO
, (InGaN/GaN) multiquantum well (MQW), and
n
-GaN
. An electroluminescence (EL) emission at a wavelength of 468 nm is observed from the hybrid LEDs after thermal annealing at
750
°
C
, showing that Sb-doped
p
-ZnO
can be used as a hole supplying layer in hybrid LEDs. Furthermore, the EL peaks are redshifted as the injection current is increased, indicating that the compressive strain in MQW layers is relaxed due to Sb-doped
p
-ZnO
layer.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3601915</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 2011-06, Vol.98 (25), p.251111-251111-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3601915 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electroluminescence emission from light-emitting diode of p -ZnO /(InGaN/GaN) multiquantum well/ n -GaN |
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