Quantum-well intermixing for optoelectronic integration using high energy ion implantation
The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication tec...
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| Veröffentlicht in: | Journal of applied physics 1995-09, Vol.78 (6), p.3697-3705 |
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| Sprache: | eng |
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| container_end_page | 3705 |
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| container_issue | 6 |
| container_start_page | 3697 |
| container_title | Journal of applied physics |
| container_volume | 78 |
| creator | Charbonneau, S. Poole, P. J. Piva, P. G. Aers, G. C. Koteles, E. S. Fallahi, M. He, J.-J. McCaffrey, J. P. Buchanan, M. Dion, M. Goldberg, R. D. Mitchell, I. V. |
| description | The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. |
| doi_str_mv | 10.1063/1.359948 |
| format | Article |
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| ispartof | Journal of applied physics, 1995-09, Vol.78 (6), p.3697-3705 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| title | Quantum-well intermixing for optoelectronic integration using high energy ion implantation |
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