Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes
We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint...
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| Veröffentlicht in: | Journal of applied physics 1995-05, Vol.77 (9), p.4819-4821 |
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| container_end_page | 4821 |
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| container_issue | 9 |
| container_start_page | 4819 |
| container_title | Journal of applied physics |
| container_volume | 77 |
| creator | Reddy, M. Mondry, M J. Rodwell, M. J. W. Martin, S. C. Muller, R. E. Smith, R. P. Chow, D. H. Schulman, J. N. |
| description | We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD’s fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated. |
| doi_str_mv | 10.1063/1.359405 |
| format | Article |
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J. W. ; Martin, S. C. ; Muller, R. E. ; Smith, R. P. ; Chow, D. H. ; Schulman, J. N.</creator><creatorcontrib>Reddy, M. ; Mondry, M J. ; Rodwell, M. J. W. ; Martin, S. C. ; Muller, R. E. ; Smith, R. P. ; Chow, D. H. ; Schulman, J. N.</creatorcontrib><description>We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD’s fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.359405</identifier><language>eng</language><ispartof>Journal of applied physics, 1995-05, Vol.77 (9), p.4819-4821</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-57ff9057524b72bd6e675a2ab4c7ab84795abe2da0571a64428c47b9d33fb2e53</citedby><cites>FETCH-LOGICAL-c291t-57ff9057524b72bd6e675a2ab4c7ab84795abe2da0571a64428c47b9d33fb2e53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Reddy, M.</creatorcontrib><creatorcontrib>Mondry, M J.</creatorcontrib><creatorcontrib>Rodwell, M. J. W.</creatorcontrib><creatorcontrib>Martin, S. C.</creatorcontrib><creatorcontrib>Muller, R. E.</creatorcontrib><creatorcontrib>Smith, R. P.</creatorcontrib><creatorcontrib>Chow, D. H.</creatorcontrib><creatorcontrib>Schulman, J. N.</creatorcontrib><title>Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes</title><title>Journal of applied physics</title><description>We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD’s fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKvgT8jRg7vNZ7M5lmJroaCgnpc32ayNbhNJUqUn_7rVehqGGYbhQeiakpqSKZ_QmkstiDxBI0oaXSkpySkaEcJo1Wilz9FFzm-EUNpwPULfCzDJWyg-Bgyhw529xVtvU_yCT4ftBhLY4pLPxduMY4_zzvzlAT_ZTSzlfV_ZOAzOlpjwbJjlySqQWvIlkFqoP_uIk8sxQCi47EJwgw-vuPOxc_kSnfUwZHf1r2P0srh7nt9X64flaj5bV5ZpWiqp-l4TqSQTRjHTTd1USWBghFVgGqG0BONYB4cOhakQrLFCGd1x3hvmJB-jm-Pu4XnOyfXtR_JbSPuWkvYXXEvbIzj-A3eXYMw</recordid><startdate>19950501</startdate><enddate>19950501</enddate><creator>Reddy, M.</creator><creator>Mondry, M J.</creator><creator>Rodwell, M. J. W.</creator><creator>Martin, S. C.</creator><creator>Muller, R. 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C.</creatorcontrib><creatorcontrib>Muller, R. E.</creatorcontrib><creatorcontrib>Smith, R. P.</creatorcontrib><creatorcontrib>Chow, D. H.</creatorcontrib><creatorcontrib>Schulman, J. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Reddy, M.</au><au>Mondry, M J.</au><au>Rodwell, M. J. W.</au><au>Martin, S. C.</au><au>Muller, R. E.</au><au>Smith, R. P.</au><au>Chow, D. H.</au><au>Schulman, J. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes</atitle><jtitle>Journal of applied physics</jtitle><date>1995-05-01</date><risdate>1995</risdate><volume>77</volume><issue>9</issue><spage>4819</spage><epage>4821</epage><pages>4819-4821</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD’s fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated.</abstract><doi>10.1063/1.359405</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1995-05, Vol.77 (9), p.4819-4821 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_359405 |
| source | AIP Digital Archive |
| title | Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes |
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