The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures
The distribution of electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN layer thicknesses (10, 20, and 30 nm) has been studied by contactless electroreflectance and compared with theoretical calculations performed for various positions of the Fermi-level on Ga...
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| Veröffentlicht in: | Applied physics letters 2011-06, Vol.98 (23), p.231902-231902-3 |
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| container_title | Applied physics letters |
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| creator | Gladysiewicz, M. Kudrawiec, R. Misiewicz, J. Cywinski, G. Siekacz, M. Wolny, P. Skierbiszewski, C. |
| description | The distribution of electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN layer thicknesses (10, 20, and 30 nm) has been studied by contactless electroreflectance and compared with theoretical calculations performed for various positions of the Fermi-level on GaN surface. For the three samples the best agreement between experimental data and theoretical calculations has been found at the same position of the Fermi-level on GaN surface (i.e.,
0.55
±
0.05
eV
below the conduction band). It means that the Fermi-level is pinned on GaN surface and this pinning can be treated as the boundary condition for the distribution of polarization-related fields in this heterostructure. |
| doi_str_mv | 10.1063/1.3592801 |
| format | Article |
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0.55
±
0.05
eV
below the conduction band). It means that the Fermi-level is pinned on GaN surface and this pinning can be treated as the boundary condition for the distribution of polarization-related fields in this heterostructure.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3592801</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-06, Vol.98 (23), p.231902-231902-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-bda3b7ea5e9139e0a12df59d9e621fa1918aaf86bb61a16ec0d6ae38317eb1ce3</citedby><cites>FETCH-LOGICAL-c350t-bda3b7ea5e9139e0a12df59d9e621fa1918aaf86bb61a16ec0d6ae38317eb1ce3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3592801$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Gladysiewicz, M.</creatorcontrib><creatorcontrib>Kudrawiec, R.</creatorcontrib><creatorcontrib>Misiewicz, J.</creatorcontrib><creatorcontrib>Cywinski, G.</creatorcontrib><creatorcontrib>Siekacz, M.</creatorcontrib><creatorcontrib>Wolny, P.</creatorcontrib><creatorcontrib>Skierbiszewski, C.</creatorcontrib><title>The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures</title><title>Applied physics letters</title><description>The distribution of electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN layer thicknesses (10, 20, and 30 nm) has been studied by contactless electroreflectance and compared with theoretical calculations performed for various positions of the Fermi-level on GaN surface. For the three samples the best agreement between experimental data and theoretical calculations has been found at the same position of the Fermi-level on GaN surface (i.e.,
0.55
±
0.05
eV
below the conduction band). It means that the Fermi-level is pinned on GaN surface and this pinning can be treated as the boundary condition for the distribution of polarization-related fields in this heterostructure.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQQIMoWFcP_oNcPXQ306FpcxGWRVeh6GU9h2k6ZStrK0l68N_bsvXoYWYYeMzHE-Ie1BqUxg2sMTdZqeBCJKCKIkWA8lIkSilMtcnhWtyE8Dm1eYaYiOpwZBlG35JjWQ9j35D_kW7omy52Qx9k18s9vW22pzlPIaOnPnQhDl4eObIfQvSji6PncCuuWjoFvlvqSnw8Px12L2n1vn_dbavUYa5iWjeEdcGUswE0rAiyps1NY1hn0BIYKInaUte1BgLNTjWaGEuEgmtwjCvxcJ7rpu3Bc2u_ffc1HW5B2VmDBbtomNjHMxtcF2n-6X94cmEXF_bPBf4CqodmLA</recordid><startdate>20110606</startdate><enddate>20110606</enddate><creator>Gladysiewicz, M.</creator><creator>Kudrawiec, R.</creator><creator>Misiewicz, J.</creator><creator>Cywinski, G.</creator><creator>Siekacz, M.</creator><creator>Wolny, P.</creator><creator>Skierbiszewski, C.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110606</creationdate><title>The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures</title><author>Gladysiewicz, M. ; Kudrawiec, R. ; Misiewicz, J. ; Cywinski, G. ; Siekacz, M. ; Wolny, P. ; Skierbiszewski, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-bda3b7ea5e9139e0a12df59d9e621fa1918aaf86bb61a16ec0d6ae38317eb1ce3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gladysiewicz, M.</creatorcontrib><creatorcontrib>Kudrawiec, R.</creatorcontrib><creatorcontrib>Misiewicz, J.</creatorcontrib><creatorcontrib>Cywinski, G.</creatorcontrib><creatorcontrib>Siekacz, M.</creatorcontrib><creatorcontrib>Wolny, P.</creatorcontrib><creatorcontrib>Skierbiszewski, C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gladysiewicz, M.</au><au>Kudrawiec, R.</au><au>Misiewicz, J.</au><au>Cywinski, G.</au><au>Siekacz, M.</au><au>Wolny, P.</au><au>Skierbiszewski, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures</atitle><jtitle>Applied physics letters</jtitle><date>2011-06-06</date><risdate>2011</risdate><volume>98</volume><issue>23</issue><spage>231902</spage><epage>231902-3</epage><pages>231902-231902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The distribution of electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN layer thicknesses (10, 20, and 30 nm) has been studied by contactless electroreflectance and compared with theoretical calculations performed for various positions of the Fermi-level on GaN surface. For the three samples the best agreement between experimental data and theoretical calculations has been found at the same position of the Fermi-level on GaN surface (i.e.,
0.55
±
0.05
eV
below the conduction band). It means that the Fermi-level is pinned on GaN surface and this pinning can be treated as the boundary condition for the distribution of polarization-related fields in this heterostructure.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3592801</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2011-06, Vol.98 (23), p.231902-231902-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3592801 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures |
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