Raman study of strain relaxation in Ge on Si

Strain in thin Ge layers grown by molecular beam epitaxy on (100) Si is measured by a Raman technique. When the average Ge thickness is 7 monoatomic layers (ML), Raman results show that the layer is almost coherent to the Si lattice. The strain begins to decrease at an average thickness of 10 ML, i....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1995-05, Vol.77 (10), p.5144-5148
Hauptverfasser:	Ichimura, Masaya, Usami, Akira, Wakahara, Akihiro, Sasaki, Akio
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!