GaP1− x N x alloys formed by ion implantation

GaP1− x N x alloys formed by ion implantation

GaP1−xNx alloys (x=0.02–0.07 and x≂0.99) have been formed by ion implantation of Ga+ and N+ into GaP. X-ray diffraction measurements proved that both a wurtzite structure and a zincblende structure of the crystals have been formed within the implanted layers. They are similar to but not the same as...

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Veröffentlicht in:Journal of applied physics 1995-06, Vol.77 (11), p.5553-5557
Hauptverfasser: Yang, Xizhen, Lin, Zhenjin, Li, Zhigang, Wu, Liu, Mao, Chenjie
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container_end_page 5557
container_issue 11
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container_title Journal of applied physics
container_volume 77
creator Yang, Xizhen
Lin, Zhenjin
Li, Zhigang
Wu, Liu
Mao, Chenjie
description GaP1−xNx alloys (x=0.02–0.07 and x≂0.99) have been formed by ion implantation of Ga+ and N+ into GaP. X-ray diffraction measurements proved that both a wurtzite structure and a zincblende structure of the crystals have been formed within the implanted layers. They are similar to but not the same as GaN and GaP, respectively. An emission band at an energy higher than the energy gap of GaP appeared on the photoluminescence (PL) spectra of the implanted layers and consists of several components. Formation of the alloy and origins of the PL components are discussed.
doi_str_mv 10.1063/1.359195
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title GaP1− x N x alloys formed by ion implantation
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