Erbium luminescence in porous silicon doped from spin-on films
Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be...
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| Veröffentlicht in: | Journal of applied physics 1995-03, Vol.77 (6), p.2679-2683 |
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| container_title | Journal of applied physics |
| container_volume | 77 |
| creator | Dorofeev, A. M. Gaponenko, N. V. Bondarenko, V. P. Bachilo, E. E. Kazuchits, N. M. Leshok, A. A. Troyanova, G. N. Vorosov, N. N. Borisenko, V. E. Gnaser, H. Bock, W. Becker, P. Oechsner, H. |
| description | Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed. |
| doi_str_mv | 10.1063/1.358735 |
| format | Article |
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V. ; Bondarenko, V. P. ; Bachilo, E. E. ; Kazuchits, N. M. ; Leshok, A. A. ; Troyanova, G. N. ; Vorosov, N. N. ; Borisenko, V. E. ; Gnaser, H. ; Bock, W. ; Becker, P. ; Oechsner, H.</creator><creatorcontrib>Dorofeev, A. M. ; Gaponenko, N. V. ; Bondarenko, V. P. ; Bachilo, E. E. ; Kazuchits, N. M. ; Leshok, A. A. ; Troyanova, G. N. ; Vorosov, N. N. ; Borisenko, V. E. ; Gnaser, H. ; Bock, W. ; Becker, P. ; Oechsner, H.</creatorcontrib><description>Erbium photoluminescence at room temperature and at 77 K has been observed from porous silicon doped with erbium from a spin-on silica gel film. Erbium incorporation into silicon dioxide at the surface of porous silicon and rapid thermal processing at temperatures higher than 1223 K were found to be a necessary prerequisite for erbium-related luminescence in porous silicon. No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. 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No erbium diffusion into monocrystalline silicon from the spin-on films was observed. The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. 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The depth-dependent erbium concentration in the bulk of porous silicon was determined by secondary-neutral- and secondary-ion-mass spectrometry depth profiling. The laterally resolved erbium distribution in the porous silicon was derived from energy-dispersive x-ray analysis. Possible mechanisms of erbium-related luminescence in porous silicon are discussed.</abstract><doi>10.1063/1.358735</doi><tpages>5</tpages></addata></record> |
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| source | AIP Digital Archive |
| title | Erbium luminescence in porous silicon doped from spin-on films |
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