Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

The effects of low-dose ion implants with Si+, Ne+, and F+ on the transient enhanced diffusion of B in silicon after annealing at 900 °C for 30 min have been investigated. Processing conditions such as implant dose (3.5×1013 cm−2) and energy (30–60 keV) were chosen to simulate the lightly doped drai...

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Veröffentlicht in:	Journal of applied physics 1995-04, Vol.77 (7), p.3056-3060
Hauptverfasser:	Vuong, H.-H., Gossmann, H.-J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Jacobson, D. C., Ahrens, R. E., Boone, T., Zeitzoff, P. M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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