Doping efficiency, optical and electrical properties of nitrogen-doped ZnO films

Doping efficiency and optical and electrical properties of the N-doped ZnO films grown on c -sapphire were investigated. An anomalous Raman mode at 275 cm −1 was observed in the films grown at high Zn temperature, which implied that the films have a large number of defects induced by high N concentr...

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Veröffentlicht in:	Journal of applied physics 2011-05, Vol.109 (9), p.093518-093518-5
Hauptverfasser:	Liu, W. W., Yao, B., Zhang, Z. Z., Li, Y. F., Li, B. H., Shan, C. X., Zhang, J. Y., Shen, D. Z., Fan, X. W.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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