Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

Thin films of vanadium dioxide (VO2) have been grown by a low temperature atomic layer deposition process at 150 °C using tetrakis[ethylmethylamino]vanadium as a vanadium source and ozone as reactant gas. Films deposited on SiO2 were amorphous, but during a thermal treatment at 450 °C tetragonal VO2...

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Veröffentlicht in:	Applied physics letters 2011-04, Vol.98 (16)
Hauptverfasser:	Rampelberg, Geert, Schaekers, Marc, Martens, Koen, Xie, Qi, Deduytsche, Davy, De Schutter, Bob, Blasco, Nicolas, Kittl, Jorge, Detavernier, Christophe
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Sprache:	eng
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container_title	Applied physics letters
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description	Thin films of vanadium dioxide (VO2) have been grown by a low temperature atomic layer deposition process at 150 °C using tetrakis[ethylmethylamino]vanadium as a vanadium source and ozone as reactant gas. Films deposited on SiO2 were amorphous, but during a thermal treatment at 450 °C tetragonal VO2(R) was formed. During in situ x-ray diffraction measurements, the semiconductor–metal transition was observed as a reversible transition between VO2(M1) and VO2(R) near 67 °C. Correlated with this phase change, a reversible change in resistivity was observed of more than two orders of magnitude for a film of 42 nm thickness.
doi_str_mv	10.1063/1.3579195
format	Article
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title	Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
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