Near-field radiative transfer based thermal rectification using doped silicon
In this letter, we have designed a near-field thermal rectifier using a film and a bulk of doped silicon, with different doping levels, separated by a vacuum gap. We examine the origin of nonlinearities in thermal rectification associated with near-field heat transfer, and investigate closely the ef...
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| Veröffentlicht in: | Applied physics letters 2011-03, Vol.98 (11), p.113106-113106-3 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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