Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. I. Growth conditions

Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. I. Growth conditions

Epitaxial GaSe films have been prepared on WSe2 (0001) substrates with 14% lattice mismatch and characterized by photoelectron spectroscopy, electron diffraction, and ex situ by tunneling microscopy. The films grow in the Frank–van der Merve growth mode. The best films with perfect azimuthal orienta...

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Veröffentlicht in:Journal of applied physics 1994-06, Vol.75 (12), p.7805-7813
Hauptverfasser: Lang, O., Schlaf, R., Tomm, Y., Pettenkofer, C., Jaegermann, W.
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container_end_page 7813
container_issue 12
container_start_page 7805
container_title Journal of applied physics
container_volume 75
creator Lang, O.
Schlaf, R.
Tomm, Y.
Pettenkofer, C.
Jaegermann, W.
description Epitaxial GaSe films have been prepared on WSe2 (0001) substrates with 14% lattice mismatch and characterized by photoelectron spectroscopy, electron diffraction, and ex situ by tunneling microscopy. The films grow in the Frank–van der Merve growth mode. The best films with perfect azimuthal orientation are formed after an annealing step at 720 K. The basic mechanisms of this van der Waals epitaxy are qualitatively discussed in terms of thermodynamic and kinetic parameters.
doi_str_mv 10.1063/1.356562
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title Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. I. Growth conditions
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