Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift ( > 7.1 V ) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage b...
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| Veröffentlicht in: | Applied physics letters 2011-03, Vol.98 (10), p.103509-103509-3 |
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| container_end_page | 103509-3 |
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| container_issue | 10 |
| container_start_page | 103509 |
| container_title | Applied physics letters |
| container_volume | 98 |
| creator | Ji, Kwang Hwan Kim, Ji-In Jung, Hong Yoon Park, Se Yeob Choi, Rino Kim, Un Ki Hwang, Cheol Seong Lee, Daeseok Hwang, Hyungsang Jeong, Jae Kyeong |
| description | Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift
(
>
7.1
V
)
in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm
O
2
ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from
V
O
to
V
O
2
+
was responsible for the NBIS-induced instability. |
| doi_str_mv | 10.1063/1.3564882 |
| format | Article |
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(
>
7.1
V
)
in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm
O
2
ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from
V
O
to
V
O
2
+
was responsible for the NBIS-induced instability.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3564882</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-03, Vol.98 (10), p.103509-103509-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-d2d9d9c9e1f8d0634f5f2fa898cbe23194f08cac0a1cb1ea820059b5dc0410bf3</citedby><cites>FETCH-LOGICAL-c350t-d2d9d9c9e1f8d0634f5f2fa898cbe23194f08cac0a1cb1ea820059b5dc0410bf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3564882$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Ji, Kwang Hwan</creatorcontrib><creatorcontrib>Kim, Ji-In</creatorcontrib><creatorcontrib>Jung, Hong Yoon</creatorcontrib><creatorcontrib>Park, Se Yeob</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><creatorcontrib>Kim, Un Ki</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><creatorcontrib>Lee, Daeseok</creatorcontrib><creatorcontrib>Hwang, Hyungsang</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><title>Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors</title><title>Applied physics letters</title><description>Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift
(
>
7.1
V
)
in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm
O
2
ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from
V
O
to
V
O
2
+
was responsible for the NBIS-induced instability.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kD9PwzAQxS0EEqUw8A28MrjYcdLaCxKqSqlUqQssLJbjP-mh1KlsF9GVT07SsjKd7t67J70fQveMThid8kc24dW0FKK4QCNGZzPCGROXaEQp5WQqK3aNblL67Neq4HyEfhbeO5Nx5_EWmi3ZR5fSITrcfR8bF7AOwekWQoO7gINrdIYvh2vQCUPbHnYQ-ksvpTw8Egj2YJzFEFLWNbSQj0P0Kiz1R9jgvIWAPbQ7nKMOCVLuYrpFV163yd39zTF6f1m8zV_JerNczZ_XxPCKZmILK6000jEvbF-19JUvvBZSmNoVnMnSU2G0oZqZmjktir6jrCtraMlo7fkYPZxzTexSis6rfYSdjkfFqBrgKab-4PXep7M3Gcinhv-bzwRV59VAUJ0I8l97rHqp</recordid><startdate>20110307</startdate><enddate>20110307</enddate><creator>Ji, Kwang Hwan</creator><creator>Kim, Ji-In</creator><creator>Jung, Hong Yoon</creator><creator>Park, Se Yeob</creator><creator>Choi, Rino</creator><creator>Kim, Un Ki</creator><creator>Hwang, Cheol Seong</creator><creator>Lee, Daeseok</creator><creator>Hwang, Hyungsang</creator><creator>Jeong, Jae Kyeong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110307</creationdate><title>Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors</title><author>Ji, Kwang Hwan ; Kim, Ji-In ; Jung, Hong Yoon ; Park, Se Yeob ; Choi, Rino ; Kim, Un Ki ; Hwang, Cheol Seong ; Lee, Daeseok ; Hwang, Hyungsang ; Jeong, Jae Kyeong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-d2d9d9c9e1f8d0634f5f2fa898cbe23194f08cac0a1cb1ea820059b5dc0410bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ji, Kwang Hwan</creatorcontrib><creatorcontrib>Kim, Ji-In</creatorcontrib><creatorcontrib>Jung, Hong Yoon</creatorcontrib><creatorcontrib>Park, Se Yeob</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><creatorcontrib>Kim, Un Ki</creatorcontrib><creatorcontrib>Hwang, Cheol Seong</creatorcontrib><creatorcontrib>Lee, Daeseok</creatorcontrib><creatorcontrib>Hwang, Hyungsang</creatorcontrib><creatorcontrib>Jeong, Jae Kyeong</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ji, Kwang Hwan</au><au>Kim, Ji-In</au><au>Jung, Hong Yoon</au><au>Park, Se Yeob</au><au>Choi, Rino</au><au>Kim, Un Ki</au><au>Hwang, Cheol Seong</au><au>Lee, Daeseok</au><au>Hwang, Hyungsang</au><au>Jeong, Jae Kyeong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2011-03-07</date><risdate>2011</risdate><volume>98</volume><issue>10</issue><spage>103509</spage><epage>103509-3</epage><pages>103509-103509-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift
(
>
7.1
V
)
in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm
O
2
ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from
V
O
to
V
O
2
+
was responsible for the NBIS-induced instability.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3564882</doi></addata></record> |
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| ispartof | Applied physics letters, 2011-03, Vol.98 (10), p.103509-103509-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3564882 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors |
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