Unique correlation of the Fermi energy with the metastable defect density in amorphous silicon
This paper reports an empirically based correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. According to this correlation, to specify two of the three quantities: Fermi energy, defect density, and t...
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| Veröffentlicht in: | Journal of applied physics 1994-02, Vol.75 (3), p.1571-1576 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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