Effect of the substrate on the insulator-metal transition of vanadium dioxide films
Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are...
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| Veröffentlicht in: | Journal of applied physics 2011-03, Vol.109 (6), p.063708-063708-5 |
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| container_end_page | 063708-5 |
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| container_issue | 6 |
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| container_title | Journal of applied physics |
| container_volume | 109 |
| creator | Kovács, György J. Bürger, Danilo Skorupa, Ilona Reuther, Helfried Heller, René Schmidt, Heidemarie |
| description | Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO
2
takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VO
x
(
x
>2.6) phase coexisting with VO
2
and the high vanadium vacancy concentration of the VO
2
. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film. |
| doi_str_mv | 10.1063/1.3563588 |
| format | Article |
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2
takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VO
x
(
x
>2.6) phase coexisting with VO
2
and the high vanadium vacancy concentration of the VO
2
. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3563588</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2011-03, Vol.109 (6), p.063708-063708-5</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-137e1b077afc9f60cf067337b095072954b66bf278f6731155f254ee1943265d3</citedby><cites>FETCH-LOGICAL-c350t-137e1b077afc9f60cf067337b095072954b66bf278f6731155f254ee1943265d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3563588$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,1561,4514,27931,27932,76392,76398</link.rule.ids></links><search><creatorcontrib>Kovács, György J.</creatorcontrib><creatorcontrib>Bürger, Danilo</creatorcontrib><creatorcontrib>Skorupa, Ilona</creatorcontrib><creatorcontrib>Reuther, Helfried</creatorcontrib><creatorcontrib>Heller, René</creatorcontrib><creatorcontrib>Schmidt, Heidemarie</creatorcontrib><title>Effect of the substrate on the insulator-metal transition of vanadium dioxide films</title><title>Journal of applied physics</title><description>Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO
2
takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VO
x
(
x
>2.6) phase coexisting with VO
2
and the high vanadium vacancy concentration of the VO
2
. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAQhoMouK4e_Ae5eug60zRJcxFkWVdhwYN6DmmbwUg_pMmK_nu7dq-eBt73mWF4GLtGWCEocYsrIZWQZXnCFgilybSUcMoWADlmpdHmnF3E-AGAWAqzYC8bIl8nPhBP757HfRXT6JLnQ_8XhD7uW5eGMet8ci2fyj6GFKZ6WvlyvWvCvuNNGL5D4zmFtouX7IxcG_3VcS7Z28Pmdf2Y7Z63T-v7XVYLCSlDoT1WoLWj2pCCmkBpIXQFRoLOjSwqpSrKdUlTjigl5bLwHk0hciUbsWQ38916HGIcPdnPMXRu_LEI9mDDoj3amNi7mY11SO7w___wrMQOZCcDdlYifgEWUmbX</recordid><startdate>20110315</startdate><enddate>20110315</enddate><creator>Kovács, György J.</creator><creator>Bürger, Danilo</creator><creator>Skorupa, Ilona</creator><creator>Reuther, Helfried</creator><creator>Heller, René</creator><creator>Schmidt, Heidemarie</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110315</creationdate><title>Effect of the substrate on the insulator-metal transition of vanadium dioxide films</title><author>Kovács, György J. ; Bürger, Danilo ; Skorupa, Ilona ; Reuther, Helfried ; Heller, René ; Schmidt, Heidemarie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-137e1b077afc9f60cf067337b095072954b66bf278f6731155f254ee1943265d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kovács, György J.</creatorcontrib><creatorcontrib>Bürger, Danilo</creatorcontrib><creatorcontrib>Skorupa, Ilona</creatorcontrib><creatorcontrib>Reuther, Helfried</creatorcontrib><creatorcontrib>Heller, René</creatorcontrib><creatorcontrib>Schmidt, Heidemarie</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kovács, György J.</au><au>Bürger, Danilo</au><au>Skorupa, Ilona</au><au>Reuther, Helfried</au><au>Heller, René</au><au>Schmidt, Heidemarie</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the substrate on the insulator-metal transition of vanadium dioxide films</atitle><jtitle>Journal of applied physics</jtitle><date>2011-03-15</date><risdate>2011</risdate><volume>109</volume><issue>6</issue><spage>063708</spage><epage>063708-5</epage><pages>063708-063708-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO
2
takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VO
x
(
x
>2.6) phase coexisting with VO
2
and the high vanadium vacancy concentration of the VO
2
. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3563588</doi></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2011-03, Vol.109 (6), p.063708-063708-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Effect of the substrate on the insulator-metal transition of vanadium dioxide films |
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