Vertical ZnO nanorod/Si contact light-emitting diode

Vertical ZnO nanorod/Si contact light-emitting diode

Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array ( NRA ) / p + -Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n − -tips of n-ZnO NRA grown vertically on an ITO/glass substrate w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2011-02, Vol.98 (9), p.093110-093110-3
Hauptverfasser: Lee, Sang Wuk, Cho, Hak Dong, Panin, Gennady, Won Kang, Tae
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 093110-3
container_issue 9
container_start_page 093110
container_title Applied physics letters
container_volume 98
creator Lee, Sang Wuk
Cho, Hak Dong
Panin, Gennady
Won Kang, Tae
description Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array ( NRA ) / p + -Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n − -tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p + -Si wafer. Proposed configuration of the VCLED allows creating a high density ( ∼ 10 9   cm − 2 ) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting.
doi_str_mv 10.1063/1.3562608
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3562608</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-6d49936d3f7b64e75d2ff85fbc29e3a5deac687c1b3f3ec365b058006a76e2e13</originalsourceid><addsrcrecordid>eNp1z0tLAzEUhuEgCo7Vhf9gti7SJnMmycxGkKJVKHThZeEmZHKpkWkiSTb-e0c6Ll0dDrx88CB0TcmSEg4rugTGG066E1RRIgQGSrtTVBFCAPOe0XN0kfPn9LIGoELtm03FazXW72FXBxViimb17GsdQ1G61KPffxRsD74UH_a18dHYS3Tm1Jjt1XwX6PXh_mX9iLe7zdP6bos1MFIwN23fAzfgxMBbK5hpnOuYG3TTW1DMWKV5JzQdwIHVwNlAWEcIV4LbxlJYoJvjrk4x52Sd_Er-oNK3pET-ciWVM3dqb49t1r6o4mP4P_4zy8ksZzP8AHJzXCM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Vertical ZnO nanorod/Si contact light-emitting diode</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lee, Sang Wuk ; Cho, Hak Dong ; Panin, Gennady ; Won Kang, Tae</creator><creatorcontrib>Lee, Sang Wuk ; Cho, Hak Dong ; Panin, Gennady ; Won Kang, Tae</creatorcontrib><description>Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array ( NRA ) / p + -Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n − -tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p + -Si wafer. Proposed configuration of the VCLED allows creating a high density ( ∼ 10 9   cm − 2 ) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3562608</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-02, Vol.98 (9), p.093110-093110-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-6d49936d3f7b64e75d2ff85fbc29e3a5deac687c1b3f3ec365b058006a76e2e13</citedby><cites>FETCH-LOGICAL-c350t-6d49936d3f7b64e75d2ff85fbc29e3a5deac687c1b3f3ec365b058006a76e2e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3562608$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Lee, Sang Wuk</creatorcontrib><creatorcontrib>Cho, Hak Dong</creatorcontrib><creatorcontrib>Panin, Gennady</creatorcontrib><creatorcontrib>Won Kang, Tae</creatorcontrib><title>Vertical ZnO nanorod/Si contact light-emitting diode</title><title>Applied physics letters</title><description>Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array ( NRA ) / p + -Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n − -tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p + -Si wafer. Proposed configuration of the VCLED allows creating a high density ( ∼ 10 9   cm − 2 ) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1z0tLAzEUhuEgCo7Vhf9gti7SJnMmycxGkKJVKHThZeEmZHKpkWkiSTb-e0c6Ll0dDrx88CB0TcmSEg4rugTGG066E1RRIgQGSrtTVBFCAPOe0XN0kfPn9LIGoELtm03FazXW72FXBxViimb17GsdQ1G61KPffxRsD74UH_a18dHYS3Tm1Jjt1XwX6PXh_mX9iLe7zdP6bos1MFIwN23fAzfgxMBbK5hpnOuYG3TTW1DMWKV5JzQdwIHVwNlAWEcIV4LbxlJYoJvjrk4x52Sd_Er-oNK3pET-ciWVM3dqb49t1r6o4mP4P_4zy8ksZzP8AHJzXCM</recordid><startdate>20110228</startdate><enddate>20110228</enddate><creator>Lee, Sang Wuk</creator><creator>Cho, Hak Dong</creator><creator>Panin, Gennady</creator><creator>Won Kang, Tae</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110228</creationdate><title>Vertical ZnO nanorod/Si contact light-emitting diode</title><author>Lee, Sang Wuk ; Cho, Hak Dong ; Panin, Gennady ; Won Kang, Tae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-6d49936d3f7b64e75d2ff85fbc29e3a5deac687c1b3f3ec365b058006a76e2e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sang Wuk</creatorcontrib><creatorcontrib>Cho, Hak Dong</creatorcontrib><creatorcontrib>Panin, Gennady</creatorcontrib><creatorcontrib>Won Kang, Tae</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sang Wuk</au><au>Cho, Hak Dong</au><au>Panin, Gennady</au><au>Won Kang, Tae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertical ZnO nanorod/Si contact light-emitting diode</atitle><jtitle>Applied physics letters</jtitle><date>2011-02-28</date><risdate>2011</risdate><volume>98</volume><issue>9</issue><spage>093110</spage><epage>093110-3</epage><pages>093110-093110-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Blue-white light emission was obtained from glass/indium tin oxide (ITO)/n-ZnO nanorod array ( NRA ) / p + -Si vertical contact light emitting diodes (VCLEDs). The nanoscale p-n heterojunction VCLEDs were formed by direct engagement n − -tips of n-ZnO NRA grown vertically on an ITO/glass substrate with p + -Si wafer. Proposed configuration of the VCLED allows creating a high density ( ∼ 10 9   cm − 2 ) of self-assembled ZnO/Si nanodiodes with point junctions of high quality due to structural perfection of the Si wafer and the tips of ZnO nanorods as well as providing a high injection current and light emission from the NRA VCLED required for solid state lighting.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3562608</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2011-02, Vol.98 (9), p.093110-093110-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3562608
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Vertical ZnO nanorod/Si contact light-emitting diode
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T02%3A41%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vertical%20ZnO%20nanorod/Si%20contact%20light-emitting%20diode&rft.jtitle=Applied%20physics%20letters&rft.au=Lee,%20Sang%20Wuk&rft.date=2011-02-28&rft.volume=98&rft.issue=9&rft.spage=093110&rft.epage=093110-3&rft.pages=093110-093110-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3562608&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true