Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling resistanc...

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Veröffentlicht in:	Applied physics letters 2011-02, Vol.98 (9)
Hauptverfasser:	Lin, J.-Y. Jason, Roy, Arunanshu M., Nainani, Aneesh, Sun, Yun, Saraswat, Krishna C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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