Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling resistanc...
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| Veröffentlicht in: | Applied physics letters 2011-02, Vol.98 (9) |
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| container_title | Applied physics letters |
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| creator | Lin, J.-Y. Jason Roy, Arunanshu M. Nainani, Aneesh Sun, Yun Saraswat, Krishna C. |
| description | Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling resistance from the large conduction band offset (CBO) between the insulator and Ge. In this work, the CBO between TiO2 and Ge is estimated to range from −0.06 to −0.26 eV so tunneling resistance can be reduced. By inserting 7.1 nm TiO2 between Al and n-Ge, current densities increased by about 900× at 0.1 V and 1200× at −0.1 V compared to contacts without TiO2. |
| doi_str_mv | 10.1063/1.3562305 |
| format | Article |
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Jason ; Roy, Arunanshu M. ; Nainani, Aneesh ; Sun, Yun ; Saraswat, Krishna C.</creator><creatorcontrib>Lin, J.-Y. Jason ; Roy, Arunanshu M. ; Nainani, Aneesh ; Sun, Yun ; Saraswat, Krishna C.</creatorcontrib><description>Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling resistance from the large conduction band offset (CBO) between the insulator and Ge. In this work, the CBO between TiO2 and Ge is estimated to range from −0.06 to −0.26 eV so tunneling resistance can be reduced. By inserting 7.1 nm TiO2 between Al and n-Ge, current densities increased by about 900× at 0.1 V and 1200× at −0.1 V compared to contacts without TiO2.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3562305</identifier><language>eng</language><ispartof>Applied physics letters, 2011-02, Vol.98 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-e844accbe77cb9729cd7c79746cc6123957e11643b1f7d77ec4a26cf77478e933</citedby><cites>FETCH-LOGICAL-c295t-e844accbe77cb9729cd7c79746cc6123957e11643b1f7d77ec4a26cf77478e933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lin, J.-Y. 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Jason</creatorcontrib><creatorcontrib>Roy, Arunanshu M.</creatorcontrib><creatorcontrib>Nainani, Aneesh</creatorcontrib><creatorcontrib>Sun, Yun</creatorcontrib><creatorcontrib>Saraswat, Krishna C.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, J.-Y. Jason</au><au>Roy, Arunanshu M.</au><au>Nainani, Aneesh</au><au>Sun, Yun</au><au>Saraswat, Krishna C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height</atitle><jtitle>Applied physics letters</jtitle><date>2011-02-28</date><risdate>2011</risdate><volume>98</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Metal contacts to n-type Ge have poor performance due to the Fermi level pinning near the Ge valence band at metal/Ge interfaces. The electron barrier height can be reduced by inserting ultrathin dielectrics at the metal-semiconductor interface. However, this technique introduces tunneling resistance from the large conduction band offset (CBO) between the insulator and Ge. In this work, the CBO between TiO2 and Ge is estimated to range from −0.06 to −0.26 eV so tunneling resistance can be reduced. By inserting 7.1 nm TiO2 between Al and n-Ge, current densities increased by about 900× at 0.1 V and 1200× at −0.1 V compared to contacts without TiO2.</abstract><doi>10.1063/1.3562305</doi></addata></record> |
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| ispartof | Applied physics letters, 2011-02, Vol.98 (9) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height |
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