Coupled finite element/boundary element method for semiconductor quantum devices with exposed surfaces

We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Po...

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Veröffentlicht in:Journal of applied physics 1994-03, Vol.75 (5), p.2545-2554
Hauptverfasser: Chen, Minhan, Porod, Wolfgang, Kirkner, David J.
Format: Artikel
Sprache:eng
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