Coupled finite element/boundary element method for semiconductor quantum devices with exposed surfaces
We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Po...
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Veröffentlicht in: | Journal of applied physics 1994-03, Vol.75 (5), p.2545-2554 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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