Effect of threading dislocations on mobility in selectively doped heterostructures grown on Si substrates

We studied the effect of threading dislocation scattering on the mobility of a two-dimensional electron gas. To verify our theory, we grew Si-doped AlGaAs/GaAs selectively doped heterostructures with different dislocation densities by changing the number of thermal annealing cycles. The theory agree...

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Veröffentlicht in:	Journal of applied physics 1994-04, Vol.75 (7), p.3681-3683
Hauptverfasser:	Ohori, T., Ohkubo, S., Kasai, K., Komeno, J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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