Charge carrier velocity distributions in field-effect transistors

Charge carrier velocity distributions in field-effect transistors

The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2011-02, Vol.98 (9), p.092106-092106-3
Hauptverfasser: Lee, Chen-Guan, Cobb, Brian, Ferlauto, Laura, Dodabalapur, Ananth
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 092106-3
container_issue 9
container_start_page 092106
container_title Applied physics letters
container_volume 98
creator Lee, Chen-Guan
Cobb, Brian
Ferlauto, Laura
Dodabalapur, Ananth
description The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributions in solution-processed zinc-tin oxide thin-film transistors. Two distinct transport pathways, each with a different activation energy, have been observed, in contrast to a single activation energy yielded by steady-state measurements. Our results show that more insight into charge transport behavior and phenomena can be obtained with such time-resolved transport measurements.
doi_str_mv 10.1063/1.3558910
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3558910</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-5f2fc7123a76aa444c5efd1395b058326093bfd649033057c16747c8be84923b3</originalsourceid><addsrcrecordid>eNp1kM1KxDAURoMoWEcXvkG3Ljrm9uavG2EoOgoDbnQd0jTRSG0licK8vR2nW1eXC4cPziHkGugaqMBbWCPnqgF6QgqgUlYIoE5JQSnFSjQczslFSh_zy2vEgmzadxPfXGlNjMHF8scNkw15X_Yh5Ri67xymMZVhLH1wQ185753NZY5mTDMxxXRJzrwZkrta7oq8Pty_tI_V7nn71G52la0VyxX3tbcSajRSGMMYs9z5HrDhHeUKa0Eb7HwvWEMRKZcWhGTSqs4p1tTY4YrcHHdtnFKKzuuvGD5N3Gug-uCuQS_uM3t3ZNPsYg4K_8PHAHoJoP8C4C9ZRmC1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Charge carrier velocity distributions in field-effect transistors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lee, Chen-Guan ; Cobb, Brian ; Ferlauto, Laura ; Dodabalapur, Ananth</creator><creatorcontrib>Lee, Chen-Guan ; Cobb, Brian ; Ferlauto, Laura ; Dodabalapur, Ananth</creatorcontrib><description>The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributions in solution-processed zinc-tin oxide thin-film transistors. Two distinct transport pathways, each with a different activation energy, have been observed, in contrast to a single activation energy yielded by steady-state measurements. Our results show that more insight into charge transport behavior and phenomena can be obtained with such time-resolved transport measurements.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3558910</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2011-02, Vol.98 (9), p.092106-092106-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-5f2fc7123a76aa444c5efd1395b058326093bfd649033057c16747c8be84923b3</citedby><cites>FETCH-LOGICAL-c284t-5f2fc7123a76aa444c5efd1395b058326093bfd649033057c16747c8be84923b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3558910$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Lee, Chen-Guan</creatorcontrib><creatorcontrib>Cobb, Brian</creatorcontrib><creatorcontrib>Ferlauto, Laura</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><title>Charge carrier velocity distributions in field-effect transistors</title><title>Applied physics letters</title><description>The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributions in solution-processed zinc-tin oxide thin-film transistors. Two distinct transport pathways, each with a different activation energy, have been observed, in contrast to a single activation energy yielded by steady-state measurements. Our results show that more insight into charge transport behavior and phenomena can be obtained with such time-resolved transport measurements.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KxDAURoMoWEcXvkG3Ljrm9uavG2EoOgoDbnQd0jTRSG0licK8vR2nW1eXC4cPziHkGugaqMBbWCPnqgF6QgqgUlYIoE5JQSnFSjQczslFSh_zy2vEgmzadxPfXGlNjMHF8scNkw15X_Yh5Ri67xymMZVhLH1wQ185753NZY5mTDMxxXRJzrwZkrta7oq8Pty_tI_V7nn71G52la0VyxX3tbcSajRSGMMYs9z5HrDhHeUKa0Eb7HwvWEMRKZcWhGTSqs4p1tTY4YrcHHdtnFKKzuuvGD5N3Gug-uCuQS_uM3t3ZNPsYg4K_8PHAHoJoP8C4C9ZRmC1</recordid><startdate>20110228</startdate><enddate>20110228</enddate><creator>Lee, Chen-Guan</creator><creator>Cobb, Brian</creator><creator>Ferlauto, Laura</creator><creator>Dodabalapur, Ananth</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110228</creationdate><title>Charge carrier velocity distributions in field-effect transistors</title><author>Lee, Chen-Guan ; Cobb, Brian ; Ferlauto, Laura ; Dodabalapur, Ananth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-5f2fc7123a76aa444c5efd1395b058326093bfd649033057c16747c8be84923b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Chen-Guan</creatorcontrib><creatorcontrib>Cobb, Brian</creatorcontrib><creatorcontrib>Ferlauto, Laura</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Chen-Guan</au><au>Cobb, Brian</au><au>Ferlauto, Laura</au><au>Dodabalapur, Ananth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge carrier velocity distributions in field-effect transistors</atitle><jtitle>Applied physics letters</jtitle><date>2011-02-28</date><risdate>2011</risdate><volume>98</volume><issue>9</issue><spage>092106</spage><epage>092106-3</epage><pages>092106-092106-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The measurement of the distribution of charge carrier velocities in a field-effect transistor can provide considerable insight into charge transport mechanisms and structure-property relationships. We have developed such a method and have applied it to study temperature-dependent velocity distributions in solution-processed zinc-tin oxide thin-film transistors. Two distinct transport pathways, each with a different activation energy, have been observed, in contrast to a single activation energy yielded by steady-state measurements. Our results show that more insight into charge transport behavior and phenomena can be obtained with such time-resolved transport measurements.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3558910</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2011-02, Vol.98 (9), p.092106-092106-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3558910
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
title Charge carrier velocity distributions in field-effect transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T06%3A45%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20carrier%20velocity%20distributions%20in%20field-effect%20transistors&rft.jtitle=Applied%20physics%20letters&rft.au=Lee,%20Chen-Guan&rft.date=2011-02-28&rft.volume=98&rft.issue=9&rft.spage=092106&rft.epage=092106-3&rft.pages=092106-092106-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3558910&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true