Bias dependence of spin injection into GaAs from Fe, FeCo, and (Ga,Mn)As contacts

Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method which provides two-dimensional cross-sectional images of the spin polarization in GaAs. While the distribution of the spin polarization below the injecting contact is nearly uniform for (Ga,Mn)As, a stron...

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Veröffentlicht in:Journal of applied physics 2011-04, Vol.109 (7), p.07C505-07C505-3
Hauptverfasser: Endres, B., Hoffmann, F., Wolf, C., Einwanger, A., Utz, M., Schuh, D., Woltersdorf, G., Ciorga, M., Weiss, D., Back, C. H., Bayreuther, G.
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Sprache:eng
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Zusammenfassung:Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method which provides two-dimensional cross-sectional images of the spin polarization in GaAs. While the distribution of the spin polarization below the injecting contact is nearly uniform for (Ga,Mn)As, a strong confinement near the contact edge is observed for Fe and FeCo. The spin polarization in GaAs changes sign when the injected current is reversed. Multiple sign reversals as a function of bias voltage as reported previously for Fe injectors are not observed with (Ga,Mn)As and Fe contacts grown on clean n + + −GaAs in agreement with earlier results for an epitaxial FeCo injector.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3553932