Electron distribution in pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As/GaAs δ-doped heterostructures

We have investigated the electronic properties of the δ-modulation-doped Al0.30Ga0.70As/In0.15Ga0.85As heterojunction for a variety of different configurations. Experimental findings are compared with theoretical predictions based on the two-band effective mass approximation including strain, many-b...

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Veröffentlicht in:	Journal of applied physics 1993-07, Vol.74 (2), p.1161-1168
Hauptverfasser:	FERNANDEZ, J. M, LAZZOUNI, M. E.K, SHAM, L. J, WIEDER, H. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics
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