Exciton photoluminescence of quantum wells affected by thermal migration and inherent interface fluctuation

Exciton photoluminescence (PL) of quantum wells (QW), affected by the thermal migration and the inherent interface roughness, has been studied by a model which includes exciton transfer between the growth islands with one atomic layer difference in well thickness. Analytical expressions, showing a r...

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Veröffentlicht in:Journal of applied physics 1993-11, Vol.74 (9), p.5349-5353
Hauptverfasser: Ping, Er-Xuan, Dalal, Vikram
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Dalal, Vikram
description Exciton photoluminescence (PL) of quantum wells (QW), affected by the thermal migration and the inherent interface roughness, has been studied by a model which includes exciton transfer between the growth islands with one atomic layer difference in well thickness. Analytical expressions, showing a red shifting and linewidth changing compared to the exciton PL spectra without thermal migration, are obtained. At low temperature, the red shifting and the linewidth changing are uniquely determined by the geometry of the QW. At high temperature, the red shift and the linewidth changing depends on the temperature, structure, and inherent interface fluctuation of the QW. Under the influence of the thermal migration, the inconsistency of the PL and PL excitation spectra has been reexamined and quantitatively obtained as a function of the temperature, quality, and structure of the QW.
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Analytical expressions, showing a red shifting and linewidth changing compared to the exciton PL spectra without thermal migration, are obtained. At low temperature, the red shifting and the linewidth changing are uniquely determined by the geometry of the QW. At high temperature, the red shift and the linewidth changing depends on the temperature, structure, and inherent interface fluctuation of the QW. 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Analytical expressions, showing a red shifting and linewidth changing compared to the exciton PL spectra without thermal migration, are obtained. At low temperature, the red shifting and the linewidth changing are uniquely determined by the geometry of the QW. At high temperature, the red shift and the linewidth changing depends on the temperature, structure, and inherent interface fluctuation of the QW. Under the influence of the thermal migration, the inconsistency of the PL and PL excitation spectra has been reexamined and quantitatively obtained as a function of the temperature, quality, and structure of the QW.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.354236</doi><tpages>5</tpages></addata></record>
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subjects Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
Collective excitations (including plasmons and other charge-density excitations)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optical properties of specific thin films, surfaces, and low-dimensional structures
Physics
Surface and interface electron states
title Exciton photoluminescence of quantum wells affected by thermal migration and inherent interface fluctuation
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