Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures
The temperature dependence (in the range 100–450 K) of the generation of fast interface states at the Si–SiO2 interface by high electric field stress in metal–oxide-semiconductor capacitors when electrons are injected by Fowler–Nordheim tunneling from the Si substrate (n type Si, with a positively b...
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| Veröffentlicht in: | Journal of applied physics 1993, Vol.73 (1), p.277-288 |
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| container_start_page | 277 |
| container_title | Journal of applied physics |
| container_volume | 73 |
| creator | VUILLAUME, D MIR, A BOUCHAKOUR, R JOURDAIN, M EL-HDIY, A SALACE, G |
| description | The temperature dependence (in the range 100–450 K) of the generation of fast interface states at the Si–SiO2 interface by high electric field stress in metal–oxide-semiconductor capacitors when electrons are injected by Fowler–Nordheim tunneling from the Si substrate (n type Si, with a positively biased gate) and from the gate (p type Si, with a negatively biased gate) was analyzed. In both cases, two different temperature regimes can be distinguished, which correspond to two mechanisms responsible for the creation of fast interface states. At stress temperature Ts larger than 180 K, a temperature-activated regime is shown to be consistent with a diffusion of hydrogen-related species, while for Ts |
| doi_str_mv | 10.1063/1.353901 |
| format | Article |
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In both cases, two different temperature regimes can be distinguished, which correspond to two mechanisms responsible for the creation of fast interface states. At stress temperature Ts larger than 180 K, a temperature-activated regime is shown to be consistent with a diffusion of hydrogen-related species, while for Ts<180 K, a nonactivated regime seems consistent with the trapped-hole model. The diffusion coefficients of these hydrogen-related species in the intermediate Ts range 180 K<Ts<300 K were determined. It is DH≊10−14–10−11 cm2/s, in good agreement with the extrapolated values from the known data for the hydrogen diffusion in SiO2 determined at higher temperatures.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.353901</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface and interface electron states</subject><ispartof>Journal of applied physics, 1993, Vol.73 (1), p.277-288</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-f9b0776f988e7d115238334963097dc8bc0acfe3b2aedee04db144258bc750503</citedby><cites>FETCH-LOGICAL-c320t-f9b0776f988e7d115238334963097dc8bc0acfe3b2aedee04db144258bc750503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4515702$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>VUILLAUME, D</creatorcontrib><creatorcontrib>MIR, A</creatorcontrib><creatorcontrib>BOUCHAKOUR, R</creatorcontrib><creatorcontrib>JOURDAIN, M</creatorcontrib><creatorcontrib>EL-HDIY, A</creatorcontrib><creatorcontrib>SALACE, G</creatorcontrib><title>Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures</title><title>Journal of applied physics</title><description>The temperature dependence (in the range 100–450 K) of the generation of fast interface states at the Si–SiO2 interface by high electric field stress in metal–oxide-semiconductor capacitors when electrons are injected by Fowler–Nordheim tunneling from the Si substrate (n type Si, with a positively biased gate) and from the gate (p type Si, with a negatively biased gate) was analyzed. In both cases, two different temperature regimes can be distinguished, which correspond to two mechanisms responsible for the creation of fast interface states. At stress temperature Ts larger than 180 K, a temperature-activated regime is shown to be consistent with a diffusion of hydrogen-related species, while for Ts<180 K, a nonactivated regime seems consistent with the trapped-hole model. The diffusion coefficients of these hydrogen-related species in the intermediate Ts range 180 K<Ts<300 K were determined. It is DH≊10−14–10−11 cm2/s, in good agreement with the extrapolated values from the known data for the hydrogen diffusion in SiO2 determined at higher temperatures.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface and interface electron states</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo90MFKAzEQBuAgCtYq-Ag5eKiHrTObTbM5StEqFnqonpdsdmIj292SRKRv75YVT8Pwf8zAz9gtwhxhIR5wLqTQgGdsglDqTEkJ52wCkGNWaqUv2VWMXwCIpdATFlbUUTDJ9x3vHd_6bOs3OfddouCMJR6TSRR5feQ7_7nj1JJNwVvuPLXNkAaKkbvQ73nb__AZAvC3e576kc8KOe60P5zefA_8ml0400a6-ZtT9vH89L58ydab1evycZ1ZkUPKnK5BqYXTZUmqQZS5KIUo9EKAVo0tawvGOhJ1bqghgqKpsShyOQRKggQxZbPxrg19jIFcdQh-b8KxQqhOXVVYjV0N9G6kBxOtaV0wnfXx3xcSpYJc_AK7F2X-</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>VUILLAUME, D</creator><creator>MIR, A</creator><creator>BOUCHAKOUR, R</creator><creator>JOURDAIN, M</creator><creator>EL-HDIY, A</creator><creator>SALACE, G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1993</creationdate><title>Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures</title><author>VUILLAUME, D ; MIR, A ; BOUCHAKOUR, R ; JOURDAIN, M ; EL-HDIY, A ; SALACE, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-f9b0776f988e7d115238334963097dc8bc0acfe3b2aedee04db144258bc750503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface and interface electron states</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>VUILLAUME, D</creatorcontrib><creatorcontrib>MIR, A</creatorcontrib><creatorcontrib>BOUCHAKOUR, R</creatorcontrib><creatorcontrib>JOURDAIN, M</creatorcontrib><creatorcontrib>EL-HDIY, A</creatorcontrib><creatorcontrib>SALACE, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>VUILLAUME, D</au><au>MIR, A</au><au>BOUCHAKOUR, R</au><au>JOURDAIN, M</au><au>EL-HDIY, A</au><au>SALACE, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures</atitle><jtitle>Journal of applied physics</jtitle><date>1993</date><risdate>1993</risdate><volume>73</volume><issue>1</issue><spage>277</spage><epage>288</epage><pages>277-288</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The temperature dependence (in the range 100–450 K) of the generation of fast interface states at the Si–SiO2 interface by high electric field stress in metal–oxide-semiconductor capacitors when electrons are injected by Fowler–Nordheim tunneling from the Si substrate (n type Si, with a positively biased gate) and from the gate (p type Si, with a negatively biased gate) was analyzed. In both cases, two different temperature regimes can be distinguished, which correspond to two mechanisms responsible for the creation of fast interface states. At stress temperature Ts larger than 180 K, a temperature-activated regime is shown to be consistent with a diffusion of hydrogen-related species, while for Ts<180 K, a nonactivated regime seems consistent with the trapped-hole model. The diffusion coefficients of these hydrogen-related species in the intermediate Ts range 180 K<Ts<300 K were determined. It is DH≊10−14–10−11 cm2/s, in good agreement with the extrapolated values from the known data for the hydrogen diffusion in SiO2 determined at higher temperatures.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.353901</doi><tpages>12</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1993, Vol.73 (1), p.277-288 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_353901 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures |
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