Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substrates

InSb epitaxial layers have been grown on GaAs substrates by low-pressure metalorganic chemical vapor deposition. A 3.15-μm-thick film yielded an x-ray full width at half maximum of 171 arcsec. A Hall mobility of 76 200 cm2/V s at 240 K and a full width at half maximum of 174 arcsec have been measure...

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Veröffentlicht in:	Journal of applied physics 1993-05, Vol.73 (10), p.5009-5013
Hauptverfasser:	BESIKCI, C, CHOI, Y. H, SUDHARSANAN, R, RAZEGHI, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Physics
Online-Zugang:	Volltext
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