Deuterium interactions with ion-implanted SiO2 layers in silicon

The interactions of deuterium gas (D2) with implantation-formed Si-SiO2-Si structures were investigated in the temperature range 500–1000 °C using nuclear-reaction analysis. At 600 °C and above there is substantial permeation of D through the overlying Si layer, and this D becomes stably bound withi...

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Veröffentlicht in:	Journal of applied physics 1993-03, Vol.73 (5), p.2196-2206
Hauptverfasser:	MYERS, S. M, BROWN, G. A, REVESZ, A. G, HUGHES, H. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Defects and impurities: doping, implantation, distribution, concentration, etc Doping and impurity implantation in germanium and silicon Exact sciences and technology Physics Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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