Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy

Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy

By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al—C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation...

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Veröffentlicht in:Journal of applied physics 1993-04, Vol.73 (7), p.3549-3554
Hauptverfasser: OHASHI, M, SHOGEN, S, KAWASAKI, M, HANABUSA, M
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Sprache:eng
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Chemistry
Exact sciences and technology
General and physical chemistry
Photochemistry
Physical chemistry of induced reactions (with radiations, particles and ultrasonics)
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creator OHASHI, M
SHOGEN, S
KAWASAKI, M
HANABUSA, M
description By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al—C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation at 351 nm induces no appreciable dissociation of the adsorbed species. When dimethylaluminum hydride was adsorbed on the Si substrate at room temperature, the 193 nm irradiation induced only a small change in the x-ray photoelectron spectra of the dissociatively adsorbed species. Variation of the photodissociation quantum yield is discussed in terms of dissociative adsorption mechanisms.
doi_str_mv 10.1063/1.352933
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fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_352933</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4735421</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-1b2a81b239c21488b6188e1b5cf36a417a1b068748cb6534a63b42939a29fb083</originalsourceid><addsrcrecordid>eNo9kE1LxDAQhoMouK6CPyEHD-uh60yStslRFr9gQUE9lyRN2Ui_SLJg_71dV7zMDMwz78u8hFwjrBEKfodrnjPF-QlZIEiVlXkOp2QBwDCTqlTn5CLGLwBEydWC9G-7IQ21j3GwXic_9HRoaO07l3ZTq9t95_t9R3dTHXzt6Lx-9ysEuKU6UVSc9h2NaV97V1Mz0e8s6ImOB03XOpvCfBDH3yHaYZwuyVmj2-iu_vqSfD4-fGyes-3r08vmfptZziBlaJiWc-HKMhRSmgKldGhy2_BCCyw1GihkKaQ1Rc6FLrgR89dKM9UYkHxJVkddOxvH4JpqDL7TYaoQqkNOFVbHnGb05oiOOlrdNkH31sd_XpQ8Fwz5DxLwZqQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy</title><source>AIP Digital Archive</source><creator>OHASHI, M ; SHOGEN, S ; KAWASAKI, M ; HANABUSA, M</creator><creatorcontrib>OHASHI, M ; SHOGEN, S ; KAWASAKI, M ; HANABUSA, M</creatorcontrib><description>By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al—C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation at 351 nm induces no appreciable dissociation of the adsorbed species. When dimethylaluminum hydride was adsorbed on the Si substrate at room temperature, the 193 nm irradiation induced only a small change in the x-ray photoelectron spectra of the dissociatively adsorbed species. Variation of the photodissociation quantum yield is discussed in terms of dissociative adsorption mechanisms.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.352933</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Chemistry ; Exact sciences and technology ; General and physical chemistry ; Photochemistry ; Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</subject><ispartof>Journal of applied physics, 1993-04, Vol.73 (7), p.3549-3554</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-1b2a81b239c21488b6188e1b5cf36a417a1b068748cb6534a63b42939a29fb083</citedby><cites>FETCH-LOGICAL-c320t-1b2a81b239c21488b6188e1b5cf36a417a1b068748cb6534a63b42939a29fb083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4735421$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OHASHI, M</creatorcontrib><creatorcontrib>SHOGEN, S</creatorcontrib><creatorcontrib>KAWASAKI, M</creatorcontrib><creatorcontrib>HANABUSA, M</creatorcontrib><title>Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy</title><title>Journal of applied physics</title><description>By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al—C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation at 351 nm induces no appreciable dissociation of the adsorbed species. When dimethylaluminum hydride was adsorbed on the Si substrate at room temperature, the 193 nm irradiation induced only a small change in the x-ray photoelectron spectra of the dissociatively adsorbed species. Variation of the photodissociation quantum yield is discussed in terms of dissociative adsorption mechanisms.</description><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Photochemistry</subject><subject>Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAQhoMouK6CPyEHD-uh60yStslRFr9gQUE9lyRN2Ui_SLJg_71dV7zMDMwz78u8hFwjrBEKfodrnjPF-QlZIEiVlXkOp2QBwDCTqlTn5CLGLwBEydWC9G-7IQ21j3GwXic_9HRoaO07l3ZTq9t95_t9R3dTHXzt6Lx-9ysEuKU6UVSc9h2NaV97V1Mz0e8s6ImOB03XOpvCfBDH3yHaYZwuyVmj2-iu_vqSfD4-fGyes-3r08vmfptZziBlaJiWc-HKMhRSmgKldGhy2_BCCyw1GihkKaQ1Rc6FLrgR89dKM9UYkHxJVkddOxvH4JpqDL7TYaoQqkNOFVbHnGb05oiOOlrdNkH31sd_XpQ8Fwz5DxLwZqQ</recordid><startdate>19930401</startdate><enddate>19930401</enddate><creator>OHASHI, M</creator><creator>SHOGEN, S</creator><creator>KAWASAKI, M</creator><creator>HANABUSA, M</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930401</creationdate><title>Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy</title><author>OHASHI, M ; SHOGEN, S ; KAWASAKI, M ; HANABUSA, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-1b2a81b239c21488b6188e1b5cf36a417a1b068748cb6534a63b42939a29fb083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Photochemistry</topic><topic>Physical chemistry of induced reactions (with radiations, particles and ultrasonics)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OHASHI, M</creatorcontrib><creatorcontrib>SHOGEN, S</creatorcontrib><creatorcontrib>KAWASAKI, M</creatorcontrib><creatorcontrib>HANABUSA, M</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OHASHI, M</au><au>SHOGEN, S</au><au>KAWASAKI, M</au><au>HANABUSA, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy</atitle><jtitle>Journal of applied physics</jtitle><date>1993-04-01</date><risdate>1993</risdate><volume>73</volume><issue>7</issue><spage>3549</spage><epage>3554</epage><pages>3549-3554</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>By irradiation of 193 nm photons on the molecularly adsorbed species of dimethylaluminum hydride on Si(100) at 150 K, the [C]/[Al] atom ratio decreased and the Al2p binding energy was lowered. This change is due to the Al—C bond cleavage by direct photoabsorption of the adsorbed species. Irradiation at 351 nm induces no appreciable dissociation of the adsorbed species. When dimethylaluminum hydride was adsorbed on the Si substrate at room temperature, the 193 nm irradiation induced only a small change in the x-ray photoelectron spectra of the dissociatively adsorbed species. Variation of the photodissociation quantum yield is discussed in terms of dissociative adsorption mechanisms.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.352933</doi><tpages>6</tpages></addata></record>
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subjects Chemistry
Exact sciences and technology
General and physical chemistry
Photochemistry
Physical chemistry of induced reactions (with radiations, particles and ultrasonics)
title Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x-ray photoelectron spectroscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T16%3A25%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photodissociation%20of%20dimethylaluminum%20hydride%20on%20Si(100)%20at%20193%20nm%20studied%20by%20x-ray%20photoelectron%20spectroscopy&rft.jtitle=Journal%20of%20applied%20physics&rft.au=OHASHI,%20M&rft.date=1993-04-01&rft.volume=73&rft.issue=7&rft.spage=3549&rft.epage=3554&rft.pages=3549-3554&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.352933&rft_dat=%3Cpascalfrancis_cross%3E4735421%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true