Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition

We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1993-04, Vol.73 (8), p.4095-4097
Hauptverfasser:	BERGER, P. R, CHU, S. N. G, LOGAN, R. A, BYRNE, R. A, COBLENTZ, D, LEE, J. III, HA, N. T, DUTTA, N. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.352839