The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs
Ultrathin coherent epitaxial films of ferromagnetic τ(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal τ unit cell is aligned normal to the (001)...
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| Veröffentlicht in: | Journal of applied physics 1993-05, Vol.73 (10), p.6399-6401 |
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| container_title | Journal of applied physics |
| container_volume | 73 |
| creator | SANDS, T DE BOECK, J HARBISON, J. P SCHERER, A GILCHRIST, H. L CHEEKS, T. L MICELI, P. F RAMESH, R KERAMIDAS, V. G |
| description | Ultrathin coherent epitaxial films of ferromagnetic τ(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal τ unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3–7.1 μΩ-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and −7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, τ(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information. |
| doi_str_mv | 10.1063/1.352609 |
| format | Article |
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P ; SCHERER, A ; GILCHRIST, H. L ; CHEEKS, T. L ; MICELI, P. F ; RAMESH, R ; KERAMIDAS, V. G</creator><creatorcontrib>SANDS, T ; DE BOECK, J ; HARBISON, J. P ; SCHERER, A ; GILCHRIST, H. L ; CHEEKS, T. L ; MICELI, P. F ; RAMESH, R ; KERAMIDAS, V. G</creatorcontrib><description>Ultrathin coherent epitaxial films of ferromagnetic τ(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal τ unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3–7.1 μΩ-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and −7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, τ(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.352609</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Metals. Metallurgy ; Physics</subject><ispartof>Journal of applied physics, 1993-05, Vol.73 (10), p.6399-6401</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c288t-6cac30b4b2b92ed4cc3344e22a21b26c4bf21ba3a330bf8745c6efe883363be03</citedby><cites>FETCH-LOGICAL-c288t-6cac30b4b2b92ed4cc3344e22a21b26c4bf21ba3a330bf8745c6efe883363be03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4854138$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SANDS, T</creatorcontrib><creatorcontrib>DE BOECK, J</creatorcontrib><creatorcontrib>HARBISON, J. 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These values of EHE resistivity correspond to signals as large as +7 and −7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, τ(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo90MFKAzEQBuAgCtYq-Ag5eKjg1iST3WaPpWgrVD1Yz8tsOqGRdLcke6h3389XcmXF0_8fPgbmZ-xaiqkUBdzLKeSqEOUJG0lhymyW5-KUjYRQMjPlrDxnFyl9CCGlgXLE3jY74nTsIrZx6xuMn3yFIXByjmzHfcNtu6NITcfp4Ds8egz8-4tPnpu7F387D7zb9cj5sE-8bfgS5-mSnTkMia7-cszeHx82i1W2fl0-LebrzCpjuqywaEHUulZ1qWirrQXQmpRCJWtVWF27viAg9MqZmc5tQY6MASigJgFjNhnu2timFMlVh-j3_QuVFNXvGJWshjF6ejPQAyaLwUVsrE__XptcSzDwAz1LXYs</recordid><startdate>19930515</startdate><enddate>19930515</enddate><creator>SANDS, T</creator><creator>DE BOECK, J</creator><creator>HARBISON, J. P</creator><creator>SCHERER, A</creator><creator>GILCHRIST, H. L</creator><creator>CHEEKS, T. L</creator><creator>MICELI, P. F</creator><creator>RAMESH, R</creator><creator>KERAMIDAS, V. G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930515</creationdate><title>The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs</title><author>SANDS, T ; DE BOECK, J ; HARBISON, J. P ; SCHERER, A ; GILCHRIST, H. L ; CHEEKS, T. L ; MICELI, P. F ; RAMESH, R ; KERAMIDAS, V. 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P</creatorcontrib><creatorcontrib>SCHERER, A</creatorcontrib><creatorcontrib>GILCHRIST, H. L</creatorcontrib><creatorcontrib>CHEEKS, T. L</creatorcontrib><creatorcontrib>MICELI, P. F</creatorcontrib><creatorcontrib>RAMESH, R</creatorcontrib><creatorcontrib>KERAMIDAS, V. G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SANDS, T</au><au>DE BOECK, J</au><au>HARBISON, J. P</au><au>SCHERER, A</au><au>GILCHRIST, H. L</au><au>CHEEKS, T. L</au><au>MICELI, P. F</au><au>RAMESH, R</au><au>KERAMIDAS, V. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs</atitle><jtitle>Journal of applied physics</jtitle><date>1993-05-15</date><risdate>1993</risdate><volume>73</volume><issue>10</issue><spage>6399</spage><epage>6401</epage><pages>6399-6401</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Ultrathin coherent epitaxial films of ferromagnetic τ(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal τ unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3–7.1 μΩ-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and −7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, τ(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.352609</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 1993-05, Vol.73 (10), p.6399-6401 |
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| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Metals. Metallurgy Physics |
| title | The extraordinary Hall effect in coherent epitaxial τ (Mn,Ni)Al thin films on GaAs |
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