Determining phonon deformation potentials of hexagonal GaN with stress modulation

In this work, phonon deformation potentials for E 2 H and A 1 ( L O ) phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an ori...

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Veröffentlicht in:	Journal of applied physics 2010-12, Vol.108 (12), p.123520-123520-5
Hauptverfasser:	Lu, Jun-Yong, Wang, Zhi-Jia, Deng, Dong-Mei, Wang, Yong, Chen, Kevin Jing, Lau, Kei-May, Zhang, Tong-Yi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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