Determining phonon deformation potentials of hexagonal GaN with stress modulation
In this work, phonon deformation potentials for E 2 H and A 1 ( L O ) phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an ori...
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| Veröffentlicht in: | Journal of applied physics 2010-12, Vol.108 (12), p.123520-123520-5 |
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| container_end_page | 123520-5 |
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| container_issue | 12 |
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| container_title | Journal of applied physics |
| container_volume | 108 |
| creator | Lu, Jun-Yong Wang, Zhi-Jia Deng, Dong-Mei Wang, Yong Chen, Kevin Jing Lau, Kei-May Zhang, Tong-Yi |
| description | In this work, phonon deformation potentials for
E
2
H
and
A
1
(
L
O
)
phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an originally flat film. By changing the size of patterned coin-shaped islands, the original biaxial stress in the flat film was reduced to different levels at the island centers, which was analyzed by finite element calculations. The proposed stress modulation method allows one to carry out a large number of Raman scattering tests, thereby leading to reliable results. With this method, the Raman biaxial pressure coefficients of
E
2
H
and
A
1
(
L
O
)
phonons of GaN were determined to be
4.47
cm
−
1
/
GPa
and
2.76
cm
−
1
/
GPa
, respectively. |
| doi_str_mv | 10.1063/1.3524548 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3524548</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-b705727c48d3aca7fe9b74d689ed639808d0f08b0f0362941bd00a7b43dd01873</originalsourceid><addsrcrecordid>eNp1kLFOwzAQhi0EEqUw8AZeGVLOsRPbCxIqtCBVICSYLSd2GqMkjmwj4O0JbQcWlrsbvvv160PoksCCQEmvyYIWOSuYOEIzAkJmvCjgGM0AcpIJyeUpOovxHYAQQeUMvdzZZEPvBjds8dj6wQ_Y2MaHXic33aNPdkhOdxH7Brf2S2_9oDu81k_406UWxxRsjLj35qPbvZyjk2bC7cVhz9Hb6v51-ZBtntePy9tNVueCpaziUPCc10wYqmvNGysrzkwppDUllQKEgQZENQ1a5pKRygBoXjFqDBDB6Rxd7XPr4GMMtlFjcL0O34qA-nWhiDq4mNibPRtrl3Yt_4f_CFF7IcrQHzjnZ34</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Determining phonon deformation potentials of hexagonal GaN with stress modulation</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lu, Jun-Yong ; Wang, Zhi-Jia ; Deng, Dong-Mei ; Wang, Yong ; Chen, Kevin Jing ; Lau, Kei-May ; Zhang, Tong-Yi</creator><creatorcontrib>Lu, Jun-Yong ; Wang, Zhi-Jia ; Deng, Dong-Mei ; Wang, Yong ; Chen, Kevin Jing ; Lau, Kei-May ; Zhang, Tong-Yi</creatorcontrib><description>In this work, phonon deformation potentials for
E
2
H
and
A
1
(
L
O
)
phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an originally flat film. By changing the size of patterned coin-shaped islands, the original biaxial stress in the flat film was reduced to different levels at the island centers, which was analyzed by finite element calculations. The proposed stress modulation method allows one to carry out a large number of Raman scattering tests, thereby leading to reliable results. With this method, the Raman biaxial pressure coefficients of
E
2
H
and
A
1
(
L
O
)
phonons of GaN were determined to be
4.47
cm
−
1
/
GPa
and
2.76
cm
−
1
/
GPa
, respectively.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3524548</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2010-12, Vol.108 (12), p.123520-123520-5</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-b705727c48d3aca7fe9b74d689ed639808d0f08b0f0362941bd00a7b43dd01873</citedby><cites>FETCH-LOGICAL-c284t-b705727c48d3aca7fe9b74d689ed639808d0f08b0f0362941bd00a7b43dd01873</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3524548$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Lu, Jun-Yong</creatorcontrib><creatorcontrib>Wang, Zhi-Jia</creatorcontrib><creatorcontrib>Deng, Dong-Mei</creatorcontrib><creatorcontrib>Wang, Yong</creatorcontrib><creatorcontrib>Chen, Kevin Jing</creatorcontrib><creatorcontrib>Lau, Kei-May</creatorcontrib><creatorcontrib>Zhang, Tong-Yi</creatorcontrib><title>Determining phonon deformation potentials of hexagonal GaN with stress modulation</title><title>Journal of applied physics</title><description>In this work, phonon deformation potentials for
E
2
H
and
A
1
(
L
O
)
phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an originally flat film. By changing the size of patterned coin-shaped islands, the original biaxial stress in the flat film was reduced to different levels at the island centers, which was analyzed by finite element calculations. The proposed stress modulation method allows one to carry out a large number of Raman scattering tests, thereby leading to reliable results. With this method, the Raman biaxial pressure coefficients of
E
2
H
and
A
1
(
L
O
)
phonons of GaN were determined to be
4.47
cm
−
1
/
GPa
and
2.76
cm
−
1
/
GPa
, respectively.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAQhi0EEqUw8AZeGVLOsRPbCxIqtCBVICSYLSd2GqMkjmwj4O0JbQcWlrsbvvv160PoksCCQEmvyYIWOSuYOEIzAkJmvCjgGM0AcpIJyeUpOovxHYAQQeUMvdzZZEPvBjds8dj6wQ_Y2MaHXic33aNPdkhOdxH7Brf2S2_9oDu81k_406UWxxRsjLj35qPbvZyjk2bC7cVhz9Hb6v51-ZBtntePy9tNVueCpaziUPCc10wYqmvNGysrzkwppDUllQKEgQZENQ1a5pKRygBoXjFqDBDB6Rxd7XPr4GMMtlFjcL0O34qA-nWhiDq4mNibPRtrl3Yt_4f_CFF7IcrQHzjnZ34</recordid><startdate>20101215</startdate><enddate>20101215</enddate><creator>Lu, Jun-Yong</creator><creator>Wang, Zhi-Jia</creator><creator>Deng, Dong-Mei</creator><creator>Wang, Yong</creator><creator>Chen, Kevin Jing</creator><creator>Lau, Kei-May</creator><creator>Zhang, Tong-Yi</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20101215</creationdate><title>Determining phonon deformation potentials of hexagonal GaN with stress modulation</title><author>Lu, Jun-Yong ; Wang, Zhi-Jia ; Deng, Dong-Mei ; Wang, Yong ; Chen, Kevin Jing ; Lau, Kei-May ; Zhang, Tong-Yi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-b705727c48d3aca7fe9b74d689ed639808d0f08b0f0362941bd00a7b43dd01873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Jun-Yong</creatorcontrib><creatorcontrib>Wang, Zhi-Jia</creatorcontrib><creatorcontrib>Deng, Dong-Mei</creatorcontrib><creatorcontrib>Wang, Yong</creatorcontrib><creatorcontrib>Chen, Kevin Jing</creatorcontrib><creatorcontrib>Lau, Kei-May</creatorcontrib><creatorcontrib>Zhang, Tong-Yi</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Jun-Yong</au><au>Wang, Zhi-Jia</au><au>Deng, Dong-Mei</au><au>Wang, Yong</au><au>Chen, Kevin Jing</au><au>Lau, Kei-May</au><au>Zhang, Tong-Yi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determining phonon deformation potentials of hexagonal GaN with stress modulation</atitle><jtitle>Journal of applied physics</jtitle><date>2010-12-15</date><risdate>2010</risdate><volume>108</volume><issue>12</issue><spage>123520</spage><epage>123520-5</epage><pages>123520-123520-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this work, phonon deformation potentials for
E
2
H
and
A
1
(
L
O
)
phonons of epitaxial hexagonal GaN thin films grown by metalorganic chemical vapor deposition on Si (111) substrate were precisely determined with a stress modulation method, which was achieved via coin-shaped patterning of an originally flat film. By changing the size of patterned coin-shaped islands, the original biaxial stress in the flat film was reduced to different levels at the island centers, which was analyzed by finite element calculations. The proposed stress modulation method allows one to carry out a large number of Raman scattering tests, thereby leading to reliable results. With this method, the Raman biaxial pressure coefficients of
E
2
H
and
A
1
(
L
O
)
phonons of GaN were determined to be
4.47
cm
−
1
/
GPa
and
2.76
cm
−
1
/
GPa
, respectively.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3524548</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2010-12, Vol.108 (12), p.123520-123520-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3524548 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Determining phonon deformation potentials of hexagonal GaN with stress modulation |
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