A new maskless selective-growth process for InP on (100) Si

We have developed a new selective-growth process of InP on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. In this process, the InP epitaxial layer was deposited on a photolithographically patterned InP-buffer film without an additional di...

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Veröffentlicht in:	Journal of applied physics 1992-11, Vol.72 (9), p.4366-4368
Hauptverfasser:	TANG, G.-P, PEINER, E, WEHMANN, H.-H, LUBNOW, A, ZWINGE, G, SCHLACHETZKI, A, HERGETH, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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