Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors
We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier densi...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2010-11, Vol.97 (20) |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 20 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 97 |
creator | Lee, Chen-Guan Cobb, Brian Dodabalapur, Ananth |
description | We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott’s model, which are normally observed in crystalline semiconductors. |
doi_str_mv | 10.1063/1.3517502 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3517502</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3517502</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-1310ee6dd0cc2045a6f17096a4eda551c4734487b54b50a9bfab8fd700b57a093</originalsourceid><addsrcrecordid>eNotkE9LwzAYh4MoWKcHv0GuHjLft2ma9qhDpzDwoueSf3WRtilJBs5P78Z2-vHAj-fwEHKPsESo-SMuuUApoLwgBYKUjCM2l6QAAM7qVuA1uUnp54Ci5Lwg7llNluaopjSHmOmRxqD94POeOvvtqJ-oGkOct2GXaArDLvswsTkG41Jylv75ydB8eIVfbx3NWz-x3g_jSepTDjHdkqteDcndnXdBvl5fPldvbPOxfl89bZgpW5EZcgTnamvBmBIqoeoeJbS1qpxVQqCpJK-qRmpRaQGq1b3STW8lgBZSQcsX5OHkNTGkFF3fzdGPKu47hO7Yp8Pu3If_A4KyWXs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lee, Chen-Guan ; Cobb, Brian ; Dodabalapur, Ananth</creator><creatorcontrib>Lee, Chen-Guan ; Cobb, Brian ; Dodabalapur, Ananth</creatorcontrib><description>We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott’s model, which are normally observed in crystalline semiconductors.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3517502</identifier><language>eng</language><ispartof>Applied physics letters, 2010-11, Vol.97 (20)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-1310ee6dd0cc2045a6f17096a4eda551c4734487b54b50a9bfab8fd700b57a093</citedby><cites>FETCH-LOGICAL-c295t-1310ee6dd0cc2045a6f17096a4eda551c4734487b54b50a9bfab8fd700b57a093</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Lee, Chen-Guan</creatorcontrib><creatorcontrib>Cobb, Brian</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><title>Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors</title><title>Applied physics letters</title><description>We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott’s model, which are normally observed in crystalline semiconductors.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkE9LwzAYh4MoWKcHv0GuHjLft2ma9qhDpzDwoueSf3WRtilJBs5P78Z2-vHAj-fwEHKPsESo-SMuuUApoLwgBYKUjCM2l6QAAM7qVuA1uUnp54Ci5Lwg7llNluaopjSHmOmRxqD94POeOvvtqJ-oGkOct2GXaArDLvswsTkG41Jylv75ydB8eIVfbx3NWz-x3g_jSepTDjHdkqteDcndnXdBvl5fPldvbPOxfl89bZgpW5EZcgTnamvBmBIqoeoeJbS1qpxVQqCpJK-qRmpRaQGq1b3STW8lgBZSQcsX5OHkNTGkFF3fzdGPKu47hO7Yp8Pu3If_A4KyWXs</recordid><startdate>20101115</startdate><enddate>20101115</enddate><creator>Lee, Chen-Guan</creator><creator>Cobb, Brian</creator><creator>Dodabalapur, Ananth</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20101115</creationdate><title>Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors</title><author>Lee, Chen-Guan ; Cobb, Brian ; Dodabalapur, Ananth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-1310ee6dd0cc2045a6f17096a4eda551c4734487b54b50a9bfab8fd700b57a093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Chen-Guan</creatorcontrib><creatorcontrib>Cobb, Brian</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Chen-Guan</au><au>Cobb, Brian</au><au>Dodabalapur, Ananth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2010-11-15</date><risdate>2010</risdate><volume>97</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report on charge transport phenomena in high-mobility solution-deposited amorphous zinc-tin oxide based thin-film transistors. At low carrier concentrations, the dominant transport mechanism is multiple trap and release, with the activation energy steadily decreasing with increasing carrier density. The activation energy decreases to zero and beyond a threshold carrier density, the mobility decreases with increasing temperature. This temperature dependence as well as the value of the mobility clearly indicates that transport is bandlike. Also observed is a clear mobility edge in accordance with the prediction of Mott’s model, which are normally observed in crystalline semiconductors.</abstract><doi>10.1063/1.3517502</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2010-11, Vol.97 (20) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_crossref_primary_10_1063_1_3517502 |
source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
title | Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T05%3A19%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Band%20transport%20and%20mobility%20edge%20in%20amorphous%20solution-processed%20zinc%20tin%20oxide%20thin-film%20transistors&rft.jtitle=Applied%20physics%20letters&rft.au=Lee,%20Chen-Guan&rft.date=2010-11-15&rft.volume=97&rft.issue=20&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3517502&rft_dat=%3Ccrossref%3E10_1063_1_3517502%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |