High-resistivity GaSb grown by molecular-beam epitaxy

GaSb undoped layers grown by molecular-beam epitaxy on GaSb or on semi-insulating GaAs substrates at temperatures between 600 and 630 °C are shown to have carrier concentrations in the low 1013 cm−3 range, corresponding to almost intrinsic conditions. The materials have been characterized using curr...

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Veröffentlicht in:	Journal of applied physics 1992-08, Vol.72 (4), p.1316-1319
Hauptverfasser:	POLYAKOV, A. Y, STAM, M, MILNES, A. G, WILSON, R. G, FANG, Z. Q, RAI-CHOUDHURY, P, HILLARD, R. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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