A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. The properties of TFTs with channel direction...

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Veröffentlicht in:Applied physics letters 2010-11, Vol.97 (20), p.202103-202103-3
Hauptverfasser: Kang, Myung-Koo, Kim, Si Joon, Kim, Hyun Jae
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container_title Applied physics letters
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creator Kang, Myung-Koo
Kim, Si Joon
Kim, Hyun Jae
description Sequential lateral solidification (SLS) thin-film transistors (TFTs) offer higher performance than conventional excimer laser-annealed TFTs. However, their performance has an anisotropy originating from the polycrystalline silicon (p-Si) microstructure. The properties of TFTs with channel direction parallel to the lateral growth (parallel TFTs) are superior to those of TFTs with a perpendicular channel direction (perpendicular TFTs). The multi-channel structure proposed in this paper, which directly incorporates a parallel component in a perpendicular TFT, exhibits greatly improved properties. This MC structure can be applied not only to p-Si produced by SLS, but also to any material with property anisotropy.
doi_str_mv 10.1063/1.3515856
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title A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor
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