Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

This paper investigates the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation. For the passivated device, more interface states were generated during SiOx passivation layer deposition by plasma-enhanced-chemical-vapor-deposition. The enhanced trap-assisted ph...

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Veröffentlicht in:	Applied physics letters 2010-11, Vol.97 (19)
Hauptverfasser:	Chen, Te-Chih, Chang, Ting-Chang, Hsieh, Tien-Yu, Tsai, Chih-Tsung, Chen, Shih-Ching, Lin, Chia-Sheng, Hung, Ming-Chin, Tu, Chun-Hao, Chang, Jiun-Jye, Chen, Po-Lun
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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