Interfacial photovoltage microscopy : a new diagnostic for silicon-on-insulator materials

The interface between silicon and various dielectric materials is of great technological importance for the operation of solid-state devices. The sign and magnitude of trapped charge at these interfaces is of particular importance, since it is often a controlling factor in device performance. Interf...

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Veröffentlicht in:	Journal of applied physics 1992-02, Vol.71 (3), p.1306-1317
Hauptverfasser:	BLANC, J, GITTLEMAN, J. I, MATEY, J. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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