The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts

The effect of Xe++ and Ar+ ion beam treatment and subsequent annealing on the Au (55 nm)/n-GaAs system was studied using cross-sectional transmission electron microscopy. The maximum depth of observed defects caused by Xe++ ions (700 keV, 1×1014 ions/cm2) was about 400 nm from the interface in excel...

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Veröffentlicht in:	Journal of applied physics 1992-04, Vol.71 (7), p.3408-3413
Hauptverfasser:	PECZ, B, RADNOCZI, G, HORVATH, Z. J, BARNA, P. B, JAROLI, E, GYULAI, J
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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