Novel high mobility Ga0.51In0.49P/GaAs modulation-doped field-effect transistor structures grown using a gas source molecular beam epitaxy

A standard Ga0.51In0.49P/GaAs modulation-doped field-effect transistor (MODFET) structure and a novel Ga0.51In0.49P/GaAs MODFET structure where the Ga0.51In0.49P spacer layer was replaced by an undoped Al0.3Ga0.7As layer were grown using a gas source molecular beam epitaxy. The Hall mobility of the...

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Veröffentlicht in:	Journal of applied physics 1992-05, Vol.71 (9), p.4632-4634
Hauptverfasser:	JIANG, Z. P, FISCHER, P. B, CHOU, S. Y, NATHAN, M. I
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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