Control of vinylsilane plasma by changing the pressure: Correspondence with a quantum chemical prediction
The pressure dependence of the chemical structure and the optical band gap of the films produced by the glow discharge decomposition of vinylsilane was studied on the basis of infrared and ultraviolet absorption spectroscopies. There was a significant structural difference between the films prepared...
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Veröffentlicht in: | Journal of applied physics 1992-05, Vol.71 (9), p.4572-4576 |
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container_title | Journal of applied physics |
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creator | Sato, Kota Uchiyama, Akihiko Iwabuchi, Susumu Hirano, Tsuneo Koinuma, Hideomi |
description | The pressure dependence of the chemical structure and the optical band gap of the films produced by the glow discharge decomposition of vinylsilane was studied on the basis of infrared and ultraviolet absorption spectroscopies. There was a significant structural difference between the films prepared at pressures below and above 0.08 Torr. The results are discussed in relation to the initial step of gas phase reactions predicted on the basis of an ab initio molecular orbital calculation. Good consistency between the experiment and the theoretical calculation was obtained by taking a pressure dependent transition in the excited state through which the decomposition of vinylsilane predominantly proceeded into account. That is, the contribution of the transition to the lowest triplet and singlet excited states becomes larger with the increase of pressure. |
doi_str_mv | 10.1063/1.350755 |
format | Article |
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There was a significant structural difference between the films prepared at pressures below and above 0.08 Torr. The results are discussed in relation to the initial step of gas phase reactions predicted on the basis of an ab initio molecular orbital calculation. Good consistency between the experiment and the theoretical calculation was obtained by taking a pressure dependent transition in the excited state through which the decomposition of vinylsilane predominantly proceeded into account. 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There was a significant structural difference between the films prepared at pressures below and above 0.08 Torr. The results are discussed in relation to the initial step of gas phase reactions predicted on the basis of an ab initio molecular orbital calculation. Good consistency between the experiment and the theoretical calculation was obtained by taking a pressure dependent transition in the excited state through which the decomposition of vinylsilane predominantly proceeded into account. 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There was a significant structural difference between the films prepared at pressures below and above 0.08 Torr. The results are discussed in relation to the initial step of gas phase reactions predicted on the basis of an ab initio molecular orbital calculation. Good consistency between the experiment and the theoretical calculation was obtained by taking a pressure dependent transition in the excited state through which the decomposition of vinylsilane predominantly proceeded into account. That is, the contribution of the transition to the lowest triplet and singlet excited states becomes larger with the increase of pressure.</abstract><doi>10.1063/1.350755</doi><tpages>5</tpages></addata></record> |
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title | Control of vinylsilane plasma by changing the pressure: Correspondence with a quantum chemical prediction |
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