Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy
Homoepitaxial Sr1+xTiO3+δ films with −0.2≤x≤0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temper...
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| Veröffentlicht in: | Applied physics letters 2010-10, Vol.97 (14) |
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| container_title | Applied physics letters |
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| creator | Tenne, D. A. Farrar, A. K. Brooks, C. M. Heeg, T. Schubert, J. Jang, H. W. Bark, C. W. Folkman, C. M. Eom, C. B. Schlom, D. G. |
| description | Homoepitaxial Sr1+xTiO3+δ films with −0.2≤x≤0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder-activated mechanism in Raman scattering. |
| doi_str_mv | 10.1063/1.3499273 |
| format | Article |
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A. ; Farrar, A. K. ; Brooks, C. M. ; Heeg, T. ; Schubert, J. ; Jang, H. W. ; Bark, C. W. ; Folkman, C. M. ; Eom, C. B. ; Schlom, D. G.</creator><creatorcontrib>Tenne, D. A. ; Farrar, A. K. ; Brooks, C. M. ; Heeg, T. ; Schubert, J. ; Jang, H. W. ; Bark, C. W. ; Folkman, C. M. ; Eom, C. B. ; Schlom, D. G.</creatorcontrib><description>Homoepitaxial Sr1+xTiO3+δ films with −0.2≤x≤0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. 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This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. 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G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy</atitle><jtitle>Applied physics letters</jtitle><date>2010-10-04</date><risdate>2010</risdate><volume>97</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Homoepitaxial Sr1+xTiO3+δ films with −0.2≤x≤0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. 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| title | Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy |
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