WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon

The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 1991-07, Vol.70 (2), p.708-719
Hauptverfasser:	PROBST, V, SCHABER, H, MITWALSKY, A, KABZA, H, VAN DEN HOVE, L, MAEX, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!