WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon
The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj...
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Veröffentlicht in: | Journal of applied physics 1991-07, Vol.70 (2), p.708-719 |
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description | The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj < 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint≳3×1020 cm−3 for As; (Cint ≳ 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint < 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≊1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach. |
doi_str_mv | 10.1063/1.349626 |
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Shallow junctions (depth xj < 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint≳3×1020 cm−3 for As; (Cint ≳ 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint < 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≊1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.349626</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Diffusion in solids ; Diffusion of impurities ; Exact sciences and technology ; Physics ; Transport properties of condensed matter (nonelectronic)</subject><ispartof>Journal of applied physics, 1991-07, Vol.70 (2), p.708-719</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-9112839ddaa3e3402f740297107bd1f9578a4513ae81a12b24a5bb5c8927f2463</citedby><cites>FETCH-LOGICAL-c320t-9112839ddaa3e3402f740297107bd1f9578a4513ae81a12b24a5bb5c8927f2463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4940808$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PROBST, V</creatorcontrib><creatorcontrib>SCHABER, H</creatorcontrib><creatorcontrib>MITWALSKY, A</creatorcontrib><creatorcontrib>KABZA, H</creatorcontrib><creatorcontrib>VAN DEN HOVE, L</creatorcontrib><creatorcontrib>MAEX, K</creatorcontrib><title>WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon</title><title>Journal of applied physics</title><description>The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj < 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint≳3×1020 cm−3 for As; (Cint ≳ 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint < 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≊1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Diffusion in solids</subject><subject>Diffusion of impurities</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLxDAQhYMoWFfBn9CDBy9dZ5K0SY6y6CqseFDxWKZpg1m6zZJsEf-93V3xMu8x8zEPHmPXCHOEStzhXEhT8eqEZQjaFKos4ZRlABwLbZQ5ZxcprQEQtTAZe_l88zynoc0X4eBS3nrnxuTDkKcwRtul3IWYpy_q-_BdrMfB7vbHabmhg_MT6Xtvw3DJzhz1qbv60xn7eHx4XzwVq9fl8-J-VVjBYVcYRD6lty2R6IQE7tQ0jEJQTYvOlEqTLFFQp5GQN1xS2TSl1YYrx2UlZuz2-NfGkFLsXL2NfkPxp0ao9zXUWB9rmNCbI7qlZKl3kQbr0z8vjQQNWvwCQDJagg</recordid><startdate>19910715</startdate><enddate>19910715</enddate><creator>PROBST, V</creator><creator>SCHABER, H</creator><creator>MITWALSKY, A</creator><creator>KABZA, H</creator><creator>VAN DEN HOVE, L</creator><creator>MAEX, K</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19910715</creationdate><title>WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon</title><author>PROBST, V ; SCHABER, H ; MITWALSKY, A ; KABZA, H ; VAN DEN HOVE, L ; MAEX, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-9112839ddaa3e3402f740297107bd1f9578a4513ae81a12b24a5bb5c8927f2463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Diffusion in solids</topic><topic>Diffusion of impurities</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PROBST, V</creatorcontrib><creatorcontrib>SCHABER, H</creatorcontrib><creatorcontrib>MITWALSKY, A</creatorcontrib><creatorcontrib>KABZA, H</creatorcontrib><creatorcontrib>VAN DEN HOVE, L</creatorcontrib><creatorcontrib>MAEX, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PROBST, V</au><au>SCHABER, H</au><au>MITWALSKY, A</au><au>KABZA, H</au><au>VAN DEN HOVE, L</au><au>MAEX, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon</atitle><jtitle>Journal of applied physics</jtitle><date>1991-07-15</date><risdate>1991</risdate><volume>70</volume><issue>2</issue><spage>708</spage><epage>719</epage><pages>708-719</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj < 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint≳3×1020 cm−3 for As; (Cint ≳ 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint < 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≊1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.349626</doi><tpages>12</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic) |
title | WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon |
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