Stability of C49 and C54 phases of TiSi2 under ion bombardment

The transformation of C49 phase TiSi2 to the low resistivity C54 phase is necessary for many microelectronic applications. Here, we report on attempts to decrease this transformation temperature by low-energy ion bombardment at elevated temperature. Ion irradiation was performed using a broad beam K...

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Veröffentlicht in:	Journal of applied physics 1991-09, Vol.70 (5), p.2660-2666
Hauptverfasser:	MOTAKEF, S, HARPER, J. M. E, D'HEURLE, F. M, GALLO, T. A, HERBOTS, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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