Inhibition of atomic hydrogen etching of Si(111) by boron doping

Inhibition of atomic hydrogen etching of Si(111) by boron doping

Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-los...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 1991-09, Vol.70 (6), p.2954-2957
Hauptverfasser: CHEN, P. J, COLAIANNI, M. L, YATES, J. T
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 2957
container_issue 6
container_start_page 2954
container_title Journal of applied physics
container_volume 70
creator CHEN, P. J
COLAIANNI, M. L
YATES, J. T
description Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.
doi_str_mv 10.1063/1.349320
format Article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_349320</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5451681</sourcerecordid><originalsourceid>FETCH-LOGICAL-c254t-ec99dd3c21f00cd6ce02ba3d711ca451d81e651a8c0c00df36685fe8de01685a3</originalsourceid><addsrcrecordid>eNo9j0FLAzEUhIMouFbBn5CDh3rY-t6m2U1uSqlaKHhQz0v2JWkj7aYke-m_d0vF0wzMxwzD2D3CDKEWTzgTcy0quGAFgtJlIyVcsgKgwlLpRl-zm5x_ABCV0AV7XvXb0IUhxJ5Hz80Q94H49mhT3Lieu4G2od-cos8wRcRH3h15F9OI23gYo1t25c0uu7s_nbDv1-XX4r1cf7ytFi_rkio5H0pHWlsrqEIPQLYmB1VnhG0QycwlWoWulmgUAQFYL-paSe-UdYCjM2LCpudeSjHn5Hx7SGFv0rFFaE_PW2zPz0f04YweTCaz88n0FPI_L8e5WqH4BQkyVic</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Inhibition of atomic hydrogen etching of Si(111) by boron doping</title><source>AIP Digital Archive</source><creator>CHEN, P. J ; COLAIANNI, M. L ; YATES, J. T</creator><creatorcontrib>CHEN, P. J ; COLAIANNI, M. L ; YATES, J. T</creatorcontrib><description>Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.349320</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics</subject><ispartof>Journal of applied physics, 1991-09, Vol.70 (6), p.2954-2957</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c254t-ec99dd3c21f00cd6ce02ba3d711ca451d81e651a8c0c00df36685fe8de01685a3</citedby><cites>FETCH-LOGICAL-c254t-ec99dd3c21f00cd6ce02ba3d711ca451d81e651a8c0c00df36685fe8de01685a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=5451681$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>CHEN, P. J</creatorcontrib><creatorcontrib>COLAIANNI, M. L</creatorcontrib><creatorcontrib>YATES, J. T</creatorcontrib><title>Inhibition of atomic hydrogen etching of Si(111) by boron doping</title><title>Journal of applied physics</title><description>Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9j0FLAzEUhIMouFbBn5CDh3rY-t6m2U1uSqlaKHhQz0v2JWkj7aYke-m_d0vF0wzMxwzD2D3CDKEWTzgTcy0quGAFgtJlIyVcsgKgwlLpRl-zm5x_ABCV0AV7XvXb0IUhxJ5Hz80Q94H49mhT3Lieu4G2od-cos8wRcRH3h15F9OI23gYo1t25c0uu7s_nbDv1-XX4r1cf7ytFi_rkio5H0pHWlsrqEIPQLYmB1VnhG0QycwlWoWulmgUAQFYL-paSe-UdYCjM2LCpudeSjHn5Hx7SGFv0rFFaE_PW2zPz0f04YweTCaz88n0FPI_L8e5WqH4BQkyVic</recordid><startdate>19910915</startdate><enddate>19910915</enddate><creator>CHEN, P. J</creator><creator>COLAIANNI, M. L</creator><creator>YATES, J. T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19910915</creationdate><title>Inhibition of atomic hydrogen etching of Si(111) by boron doping</title><author>CHEN, P. J ; COLAIANNI, M. L ; YATES, J. T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-ec99dd3c21f00cd6ce02ba3d711ca451d81e651a8c0c00df36685fe8de01685a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>CHEN, P. J</creatorcontrib><creatorcontrib>COLAIANNI, M. L</creatorcontrib><creatorcontrib>YATES, J. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>CHEN, P. J</au><au>COLAIANNI, M. L</au><au>YATES, J. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inhibition of atomic hydrogen etching of Si(111) by boron doping</atitle><jtitle>Journal of applied physics</jtitle><date>1991-09-15</date><risdate>1991</risdate><volume>70</volume><issue>6</issue><spage>2954</spage><epage>2957</epage><pages>2954-2957</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-(√3×√3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.349320</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 1991-09, Vol.70 (6), p.2954-2957
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_349320
source AIP Digital Archive
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
title Inhibition of atomic hydrogen etching of Si(111) by boron doping
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-11T15%3A43%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Inhibition%20of%20atomic%20hydrogen%20etching%20of%20Si(111)%20by%20boron%20doping&rft.jtitle=Journal%20of%20applied%20physics&rft.au=CHEN,%20P.%20J&rft.date=1991-09-15&rft.volume=70&rft.issue=6&rft.spage=2954&rft.epage=2957&rft.pages=2954-2957&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.349320&rft_dat=%3Cpascalfrancis_cross%3E5451681%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true