Carbon impurities and the yellow luminescence in GaN
Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N ( C N ) is a shallow acceptor, we find that C N has an ionization energy of 0.90 eV. Our calculated absorpti...
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| Veröffentlicht in: | Applied physics letters 2010-10, Vol.97 (15), p.152108-152108-3 |
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| container_title | Applied physics letters |
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| creator | Lyons, J. L. Janotti, A. Van de Walle, C. G. |
| description | Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N
(
C
N
)
is a shallow acceptor, we find that
C
N
has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that
C
N
is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that
C
N
acts as a shallow acceptor, should be re-examined. |
| doi_str_mv | 10.1063/1.3492841 |
| format | Article |
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(
C
N
)
is a shallow acceptor, we find that
C
N
has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that
C
N
is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that
C
N
acts as a shallow acceptor, should be re-examined.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3492841</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-10, Vol.97 (15), p.152108-152108-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-2af2a2aa7235640405d45991885851d1ed400ed8fca7c3a03ce4d308e8c88af93</citedby><cites>FETCH-LOGICAL-c350t-2af2a2aa7235640405d45991885851d1ed400ed8fca7c3a03ce4d308e8c88af93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3492841$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76353,76359</link.rule.ids></links><search><creatorcontrib>Lyons, J. L.</creatorcontrib><creatorcontrib>Janotti, A.</creatorcontrib><creatorcontrib>Van de Walle, C. G.</creatorcontrib><title>Carbon impurities and the yellow luminescence in GaN</title><title>Applied physics letters</title><description>Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N
(
C
N
)
is a shallow acceptor, we find that
C
N
has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that
C
N
is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that
C
N
acts as a shallow acceptor, should be re-examined.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1z0FLxDAQhuEgCtbVg_8gVw9dZzpJm14EKboKi170HMY0xUibLk0X2X_vyi548jQMvHzwCHGNsEQo6RaXpOrCKDwRGUJV5YRoTkUGAJSXtcZzcZHS1_7VBVEmVMPTxxhlGDbbKczBJ8mxlfOnlzvf9-O37LdDiD45H52XIcoVv1yKs4775K-OdyHeHx_emqd8_bp6bu7XuSMNc15wV3DBXBWkSwUKdKt0XaMx2mhs0bcKwLemc1w5YiDnVUtgvHHGcFfTQtwcdt00pjT5zm6mMPC0swj2l2vRHrn79u7QJhdmnsMY_48PZvtnthzpBwOzW6A</recordid><startdate>20101011</startdate><enddate>20101011</enddate><creator>Lyons, J. L.</creator><creator>Janotti, A.</creator><creator>Van de Walle, C. G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20101011</creationdate><title>Carbon impurities and the yellow luminescence in GaN</title><author>Lyons, J. L. ; Janotti, A. ; Van de Walle, C. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-2af2a2aa7235640405d45991885851d1ed400ed8fca7c3a03ce4d308e8c88af93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lyons, J. L.</creatorcontrib><creatorcontrib>Janotti, A.</creatorcontrib><creatorcontrib>Van de Walle, C. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lyons, J. L.</au><au>Janotti, A.</au><au>Van de Walle, C. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carbon impurities and the yellow luminescence in GaN</atitle><jtitle>Applied physics letters</jtitle><date>2010-10-11</date><risdate>2010</risdate><volume>97</volume><issue>15</issue><spage>152108</spage><epage>152108-3</epage><pages>152108-152108-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N
(
C
N
)
is a shallow acceptor, we find that
C
N
has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that
C
N
is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that
C
N
acts as a shallow acceptor, should be re-examined.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3492841</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-10, Vol.97 (15), p.152108-152108-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3492841 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Carbon impurities and the yellow luminescence in GaN |
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